采用 150 纳米 CMOS 技术的质子辐照大规模耗尽型单片式有源像素传感器的测试光束性能

L. Schall, Marlon Babero, Pierre Barrilon, C. Bespin, P. Breugnon, Ivan Caicedo, Yavuz Degerli, J. Dingfelder, T. Hemperek, Toko Hirono, F. Hügging, Hans Krüger, P. Pangaud, P. Rymaszewski, Philippe Schwemling, Tianyang Wang, N. Wermes, Sinuo Zhang
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Test-beam performance of proton-irradiated, large-scale depleted monolithic active pixel sensors in 150 nm CMOS technology
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