用高频磁控溅射法获得的 CdSe1-xSx 薄膜的结构和形态特性

A. I. Kashuba, I. Semkiv, B. Andriyevsky, H. Ilchuk, N.T. Pokladok
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引用次数: 0

摘要

利用高频磁控溅射法在石英和硅基底上沉积了碲化镉 1-xSx(x= 0.3、0.4 和 0.6)薄膜。利用 X 射线荧光光谱和 X 射线衍射数据分析了化学成分和晶体结构。CdSe1-xSx 薄膜结晶为六方结构(结构类型 - ZnO,空间群 P63mc(编号 186))。通过 X 射线衍射分析估算了晶格参数(a、c 和 V)、晶粒尺寸(D)、应变(ε)、位错密度(δ)和纹理系数 TC(hkl)。单位晶胞参数随着 CdSe1-xSx 薄膜中 S 含量的增加而降低。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Structural and morphological properties of CdSe1-xSx thin films obtained by the method of high-frequency magnetron sputtering
CdSe1-xSx (x= 0.3, 0.4 and 0.6) thin films were deposited on quartz and silicon substrates by the method of high-frequency magnetron sputtering. The chemical composition analysis and crystal structure refinement was examined with using X-ray fluorescence spectroscopy and X-ray diffraction data. CdSe1-xSx thin films crystallizes in hexagonal structure (structure type – ZnO, space group P63mc (No. 186)). The lattice parameters (a, c and V), crystallite size (D), strain (ε), dislocation density (δ) and the texture coefficient TC(hkl) was estimated from X-ray diffraction analysis. Units-cell parameters decrease with increasing S content in CdSe1-xSx thin film.
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