Miguel A. Dominguez, Jose Luis Pau, Andrés Redondo-Cubero
{"title":"在可回收塑料基板上制造的氮化锌薄膜晶体管的光传感特性","authors":"Miguel A. Dominguez, Jose Luis Pau, Andrés Redondo-Cubero","doi":"10.1051/epjap/2024230169","DOIUrl":null,"url":null,"abstract":"In this work, the characterization of zinc nitride (Zn3N2) Thin-film Transistors (TFTs) as phototransistors is presented. Polyethylene terephthalate is used as recyclable plastic substrate. A zinc oxide (ZnO) film is used as passivation layer. The Zn3N2 and ZnO films are deposited at room temperature using a magnetron sputtering. The sensitivity, responsivity and detectivity were extracted and analyzed. Interestingly, a relation between the maximum value of detectivity and the threshold voltage VT was found. Moreover, the electrical characteristics are analyzed after 100 days on air to evaluate the stability under ambient conditions. To the best of our knowledge, the characterization of Zn3N2 TFTs as phototransistors is presented for the first time.","PeriodicalId":301303,"journal":{"name":"The European Physical Journal Applied Physics","volume":" 23","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-02-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Photosensing properties of zinc nitride thin-film transistors fabricated on recyclable plastic substrates\",\"authors\":\"Miguel A. Dominguez, Jose Luis Pau, Andrés Redondo-Cubero\",\"doi\":\"10.1051/epjap/2024230169\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, the characterization of zinc nitride (Zn3N2) Thin-film Transistors (TFTs) as phototransistors is presented. Polyethylene terephthalate is used as recyclable plastic substrate. A zinc oxide (ZnO) film is used as passivation layer. The Zn3N2 and ZnO films are deposited at room temperature using a magnetron sputtering. The sensitivity, responsivity and detectivity were extracted and analyzed. Interestingly, a relation between the maximum value of detectivity and the threshold voltage VT was found. Moreover, the electrical characteristics are analyzed after 100 days on air to evaluate the stability under ambient conditions. To the best of our knowledge, the characterization of Zn3N2 TFTs as phototransistors is presented for the first time.\",\"PeriodicalId\":301303,\"journal\":{\"name\":\"The European Physical Journal Applied Physics\",\"volume\":\" 23\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-02-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The European Physical Journal Applied Physics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1051/epjap/2024230169\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The European Physical Journal Applied Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1051/epjap/2024230169","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Photosensing properties of zinc nitride thin-film transistors fabricated on recyclable plastic substrates
In this work, the characterization of zinc nitride (Zn3N2) Thin-film Transistors (TFTs) as phototransistors is presented. Polyethylene terephthalate is used as recyclable plastic substrate. A zinc oxide (ZnO) film is used as passivation layer. The Zn3N2 and ZnO films are deposited at room temperature using a magnetron sputtering. The sensitivity, responsivity and detectivity were extracted and analyzed. Interestingly, a relation between the maximum value of detectivity and the threshold voltage VT was found. Moreover, the electrical characteristics are analyzed after 100 days on air to evaluate the stability under ambient conditions. To the best of our knowledge, the characterization of Zn3N2 TFTs as phototransistors is presented for the first time.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
