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碳化硅模具分离的混合工艺技术

IF 4.1 2区 材料科学 Q2 ENGINEERING, MANUFACTURING
Materials and Manufacturing Processes Pub Date : 2024-02-07 DOI:10.1080/10426914.2024.2311386
Shun-Tong Chen, Ping Lo, Chun-Hung Hu
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引用次数: 0

摘要

碳化硅（SiC）具有宽带隙和耐高压的特性，是制造用于 5 G 和电动汽车的功能强大的高频芯片的理想材料。然而，碳化硅强大的化学键却使它的性能大打折扣。
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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A hybrid process technology of SiC die separation
Silicon carbide (SiC) is ideal for making powerful, high-frequency chips for 5 G and electric vehicles due to its wide band gap and resistance to high voltage. However, its powerful chemical bond s...
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来源期刊
Materials and Manufacturing Processes
Materials and Manufacturing Processes 工程技术-材料科学：综合
CiteScore
9.00
自引率
22.90%
发文量
132
审稿时长
3.4 months
期刊介绍： Materials and Manufacturing Processes deals with issues that result in better utilization of raw materials and energy, integration of design and manufacturing activities requiring the invention of suitable new manufacturing processes and techniques, unmanned production dependent on efficient and reliable control of various processes including intelligent processing, introduction of new materials in industrial production necessitating new manufacturing process technology, and more. Information is offered in various formats, including research articles, letter reports, review articles, conference papers, applied research, book and conference reviews, and entire issues devoted to symposia. All submitted manuscripts are subject to initial appraisal by the Editors, and, if found suitable for further consideration, to peer review by independent, anonymous expert referees. All peer review is single blind and submission is online via ScholarOne Manuscripts.
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