单晶硅热氧化形成的涂层研究

IF 0.7 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

Integrated Ferroelectrics Pub Date : 2024-02-08 DOI:10.1080/10584587.2023.2296317

B. D. Igamov, G. T. Imanova, A. I. Kamardin, I. R. Bekpulatov

引用次数: 0

摘要

在1200 °C的温度下通过热氧化形成的SiO2氧化物在Si上的薄涂层参数的复杂实验研究结果，包括使用电子和X-r...

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Investigation of Coatings Formed by Thermal Oxidation on Monocrystalline Silicon

The results of complex experimental studies of the parameters of thin coatings of SiO2 oxides on Si, formed by thermal oxidation at temperatures of 1200 °C, including studies using electron and X-r...

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来源期刊

Integrated Ferroelectrics 工程技术-工程：电子与电气

CiteScore

1.40

自引率

0.00%

发文量

179

审稿时长

3 months

期刊介绍： Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices. Such devices unite ferroelectric films and semiconductor integrated circuit chips. The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.