STT-MRAM 的新型双功率混合写操作结构

IF 1.1 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

International Journal of Electronics Pub Date : 2024-02-05 DOI:10.1080/00207217.2024.2312562

Xiangjian Jia, Guanxi Cheng, Guangjun Zhang, Yanfeng Jiang

引用次数: 0

摘要

由于固有的物理特性和工艺变化的影响，1T-1 R STT-MRAM 位元组的写操作出现了非对称和随机的关键问题。在这一过程中，写入操作会出现非对称和随机问题。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Novel dual power hybrid write operation structure for STT-MRAM

Due to the inherent physical characteristics and the influence of process variation, the write operation in the 1T–1 R STT-MRAM bit-cell shows critical issues of asymmetric and stochastic. In the p...

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来源期刊

International Journal of Electronics 工程技术-工程：电子与电气

CiteScore

3.30

自引率

15.40%

发文量

110

审稿时长

8 months

期刊介绍： The International Journal of Electronics (IJE) supports technical applications and developing research at the cutting edge of electronics. Encompassing a broad range of electronic topics, we are a leading electronics journal dedicated to quickly sharing new concepts and developments the field of electronics.