利用离子缺陷调整掺钆 CeO2-x 外延薄膜的介电常数

IF 7 3区材料科学 Q1 ENERGY & FUELS

Journal of Physics-Energy Pub Date : 2024-02-12 DOI:10.1088/2515-7655/ad2452

A Palliotto, Y Wu, A D Rata, A Herklotz, S Zhou, K Dörr, P Muralt, D-S Park

{"title":"利用离子缺陷调整掺钆 CeO2-x 外延薄膜的介电常数","authors":"A Palliotto, Y Wu, A D Rata, A Herklotz, S Zhou, K Dörr, P Muralt, D-S Park","doi":"10.1088/2515-7655/ad2452","DOIUrl":null,"url":null,"abstract":"Engineering materials with highly tunable physical properties in response to external stimuli is a cornerstone strategy for advancing energy technology. Among various approaches, engineering ionic defects and understanding their roles are essential in tailoring emergent material properties and functionalities. Here, we demonstrate an effective approach for creating and controlling ionic defects (oxygen vacancies) in epitaxial Gd-doped CeO2−<italic toggle=\"yes\">x</italic>\n (CGO)(001) films grown on Nb:SrTiO3(001) single crystal. Our results exhibit a significant limitation in the formation of excess oxygen vacancies in the films during high-temperature film growth. However, we have discovered that managing the oxygen vacancies in the epitaxial CGO(001) films is feasible using a two-step film growth process. Subsequently, our findings show that manipulating excess oxygen vacancies is a key to the emergence of giant apparent dielectric permittivity (e.g. <inline-formula>\n<tex-math><?CDATA $\\varepsilon ^{\\prime}$?></tex-math>\n<mml:math overflow=\"scroll\"><mml:msup><mml:mi>ε</mml:mi><mml:mi mathvariant=\"normal\">′</mml:mi></mml:msup></mml:math>\n<inline-graphic xlink:href=\"jpenergyad2452ieqn1.gif\" xlink:type=\"simple\"></inline-graphic>\n</inline-formula>\n<inline-formula>\n<tex-math><?CDATA $ \\approx $?></tex-math>\n<mml:math overflow=\"scroll\"><mml:mo>≈</mml:mo></mml:math>\n<inline-graphic xlink:href=\"jpenergyad2452ieqn2.gif\" xlink:type=\"simple\"></inline-graphic>\n</inline-formula> 106) in the epitaxial films under electrical field control. Overall, the strategy of tuning functional ionic defects in CGO and similar oxides is beneficial for various applications such as electromechanical, sensing, and energy storage applications.","PeriodicalId":48500,"journal":{"name":"Journal of Physics-Energy","volume":"38 1","pages":""},"PeriodicalIF":7.0000,"publicationDate":"2024-02-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Tailoring dielectric permittivity of epitaxial Gd-doped CeO2−x films by ionic defects\",\"authors\":\"A Palliotto, Y Wu, A D Rata, A Herklotz, S Zhou, K Dörr, P Muralt, D-S Park\",\"doi\":\"10.1088/2515-7655/ad2452\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Engineering materials with highly tunable physical properties in response to external stimuli is a cornerstone strategy for advancing energy technology. Among various approaches, engineering ionic defects and understanding their roles are essential in tailoring emergent material properties and functionalities. Here, we demonstrate an effective approach for creating and controlling ionic defects (oxygen vacancies) in epitaxial Gd-doped CeO2−<italic toggle=\\\"yes\\\">x</italic>\\n (CGO)(001) films grown on Nb:SrTiO3(001) single crystal. Our results exhibit a significant limitation in the formation of excess oxygen vacancies in the films during high-temperature film growth. However, we have discovered that managing the oxygen vacancies in the epitaxial CGO(001) films is feasible using a two-step film growth process. Subsequently, our findings show that manipulating excess oxygen vacancies is a key to the emergence of giant apparent dielectric permittivity (e.g. <inline-formula>\\n<tex-math><?CDATA $\\\\varepsilon ^{\\\\prime}$?></tex-math>\\n<mml:math overflow=\\\"scroll\\\"><mml:msup><mml:mi>ε</mml:mi><mml:mi mathvariant=\\\"normal\\\">′</mml:mi></mml:msup></mml:math>\\n<inline-graphic xlink:href=\\\"jpenergyad2452ieqn1.gif\\\" xlink:type=\\\"simple\\\"></inline-graphic>\\n</inline-formula>\\n<inline-formula>\\n<tex-math><?CDATA $ \\\\approx $?></tex-math>\\n<mml:math overflow=\\\"scroll\\\"><mml:mo>≈</mml:mo></mml:math>\\n<inline-graphic xlink:href=\\\"jpenergyad2452ieqn2.gif\\\" xlink:type=\\\"simple\\\"></inline-graphic>\\n</inline-formula> 106) in the epitaxial films under electrical field control. Overall, the strategy of tuning functional ionic defects in CGO and similar oxides is beneficial for various applications such as electromechanical, sensing, and energy storage applications.\",\"PeriodicalId\":48500,\"journal\":{\"name\":\"Journal of Physics-Energy\",\"volume\":\"38 1\",\"pages\":\"\"},\"PeriodicalIF\":7.0000,\"publicationDate\":\"2024-02-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Physics-Energy\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1088/2515-7655/ad2452\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENERGY & FUELS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Physics-Energy","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1088/2515-7655/ad2452","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENERGY & FUELS","Score":null,"Total":0}

引用次数: 0

摘要

针对外部刺激设计具有高度可调物理性质的材料是推动能源技术发展的基础战略。在各种方法中，离子缺陷工程和了解其作用对于定制新出现的材料特性和功能至关重要。在这里，我们展示了一种在 Nb:SrTiO3(001) 单晶上生长的外延掺钆 CeO2-x (CGO)(001) 薄膜中制造和控制离子缺陷（氧空位）的有效方法。我们的研究结果表明，在高温薄膜生长过程中，薄膜中过量氧空位的形成受到很大限制。然而，我们发现，使用两步薄膜生长过程可以管理外延 CGO(001) 薄膜中的氧空位。随后，我们的研究结果表明，在电场控制下，处理过量的氧空位是外延薄膜出现巨大表观介电常数（如ε′≈106）的关键。总之，在 CGO 和类似氧化物中调整功能离子缺陷的策略有利于机电、传感和储能等各种应用。

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Tailoring dielectric permittivity of epitaxial Gd-doped CeO2−x films by ionic defects

Engineering materials with highly tunable physical properties in response to external stimuli is a cornerstone strategy for advancing energy technology. Among various approaches, engineering ionic defects and understanding their roles are essential in tailoring emergent material properties and functionalities. Here, we demonstrate an effective approach for creating and controlling ionic defects (oxygen vacancies) in epitaxial Gd-doped CeO_2−x (CGO)(001) films grown on Nb:SrTiO₃(001) single crystal. Our results exhibit a significant limitation in the formation of excess oxygen vacancies in the films during high-temperature film growth. However, we have discovered that managing the oxygen vacancies in the epitaxial CGO(001) films is feasible using a two-step film growth process. Subsequently, our findings show that manipulating excess oxygen vacancies is a key to the emergence of giant apparent dielectric permittivity (e.g.

ε′

≈

10⁶) in the epitaxial films under electrical field control. Overall, the strategy of tuning functional ionic defects in CGO and similar oxides is beneficial for various applications such as electromechanical, sensing, and energy storage applications.

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来源期刊

Journal of Physics-Energy Multiple-

CiteScore

10.90

自引率

1.40%

发文量

期刊介绍： The Journal of Physics-Energy is an interdisciplinary and fully open-access publication dedicated to setting the agenda for the identification and dissemination of the most exciting and significant advancements in all realms of energy-related research. Committed to the principles of open science, JPhys Energy is designed to maximize the exchange of knowledge between both established and emerging communities, thereby fostering a collaborative and inclusive environment for the advancement of energy research.