短路条件下不同 GaN HEMT 类型的相位压降特性比较分析

{"title":"短路条件下不同 GaN HEMT 类型的相位压降特性比较分析","authors":"Hyun-Soo Yoon, Cheol-Min Kim, Jong-Soo Kim, Nam-Joon Kim","doi":"10.5370/kiee.2024.73.1.50","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":23009,"journal":{"name":"The Transactions of the Korean Institute of Electrical Engineers","volume":"21 7","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Comparative Analysis of Phase Leg Voltage Drop Characteristics according to GaN HEMT Type in Short Circuit Condition\",\"authors\":\"Hyun-Soo Yoon, Cheol-Min Kim, Jong-Soo Kim, Nam-Joon Kim\",\"doi\":\"10.5370/kiee.2024.73.1.50\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\",\"PeriodicalId\":23009,\"journal\":{\"name\":\"The Transactions of the Korean Institute of Electrical Engineers\",\"volume\":\"21 7\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-01-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Transactions of the Korean Institute of Electrical Engineers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.5370/kiee.2024.73.1.50\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Transactions of the Korean Institute of Electrical Engineers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.5370/kiee.2024.73.1.50","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}