具有不同杂质缺陷的 2,4-二硝基咪唑晶体的动态特性和分子间相互作用的理论研究

IF 2.6 3区 化学 Q2 CHEMISTRY, MULTIDISCIPLINARY
CrystEngComm Pub Date : 2024-01-20 DOI:10.1039/D3CE01307C
Mengyun Mei, Jincheng Ji, Zijian Sun and Weihua Zhu
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引用次数: 0

摘要

采用密度泛函紧密结合(DFTB)方法和基于 DFTB 的分子动力学(DFTB-MD)模拟研究了在不同温度下掺入不同量的 1,4-二硝基咪唑(1,4-DNI)的 2,4-二硝基咪唑(2,4-DNI)晶体的结构、分子间相互作用和动力学性质。随着掺杂浓度的增加,体系的稳定性降低。从热力学角度来看,将掺杂的缺陷排列在分子层中是最有利的。杂质的掺入改变了 2,4-DNI 分子表面静电势(ESP)的极值点,但不会改变极值点的位置,从而降低了 2,4-DNI 分子的稳定性和安全性。动态模拟结果表明,杂质的掺入并没有改变 2,4-DNI 分子的分解机理,而是有效地促进了其分解和中间产物的形成。在最初的分解阶段,位于杂质分子周围的 2,4-DNI 分子更容易分解。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Theoretical studies on dynamic properties and intermolecular interactions of 2,4-dinitroimidazole crystals with different impurity defects

Theoretical studies on dynamic properties and intermolecular interactions of 2,4-dinitroimidazole crystals with different impurity defects

The density functional tight binding (DFTB) method and DFTB-based molecular dynamics (DFTB-MD) simulations were used to study the structure, intermolecular interactions, and dynamic properties of 2,4-dinitroimidazole (2,4-DNI) crystals doped with different amounts of 1,4-dinitroimidazole (1,4-DNI) at different temperatures. As the doping concentration increases, the stability of the system decreases. It is thermodynamically most favorable to arrange the doped defects in molecular layers. The doping of impurities changes the extreme point of the surface electrostatic potential (ESP) of the 2,4-DNI molecules, but would not change the position of the extreme point, which reduces the stability and safety of the 2,4-DNI molecules. The dynamic simulation showed that the doping of the impurities does not change the decomposition mechanism of the 2,4-DNI molecules, but effectively promotes their decomposition and the formation of intermediate products. At the initial decomposition stage, the 2,4-DNI molecules located around the impurity molecules become more easy to decompose.

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来源期刊
CrystEngComm
CrystEngComm 化学-化学综合
CiteScore
5.50
自引率
9.70%
发文量
747
审稿时长
1.7 months
期刊介绍: Design and understanding of solid-state and crystalline materials
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