具有非均匀载流子分布的 InGaN/GaN LED 中载流子动态的多载流子寿命模型

IF 2.7 3区 物理与天体物理 Q2 PHYSICS, APPLIED
Xuefeng Li, Elizabeth DeJong, Rob Armitage, Daniel Feezell
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引用次数: 0

摘要

我们为载流子分布不均匀的发光二极管(LED)(如多量子阱(MQW)结构)引入了多载流子寿命模型(MCLM)。通过使用 MCLM,我们成功解释了 V-pit 工程 MQW LED 的调制响应,其 S21 滚降慢于 -20 dB/decade。利用所提出的模型和梯度下降法,我们通过平均整个量子阱的载流子行为,提取了有效的重组和逸出寿命。我们的结果表明,与从单个量子阱发光的 LED 相比,MQW LED 的有效载流子重组和逸出速度更慢,这表明通过 V 坑工程实现的较低载流子密度具有优势。值得注意的是,有效的载流子重组时间比有效的逸出寿命低一个数量级以上,这表明量子阱中的大多数载流子都在重组,而逸出过程仍然很弱。为确保 MCLM 的可靠性和稳健性,我们对其进行了全面的三重验证。这项工作证实了通过 V 坑工程将载流子扩散到多个量子阱的积极影响。此外,MCLM 还适用于其他载流子分布不均匀的 LED,如表面重组严重和横向载流子分布不均匀的微型 LED。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Multiple-carrier-lifetime model for carrier dynamics in InGaN/GaN LEDs with a non-uniform carrier distribution
We introduce a multiple-carrier-lifetime model (MCLM) for light-emitting diodes (LEDs) with non-uniform carrier distribution, such as in multiple-quantum-well (MQW) structures. By employing the MCLM, we successfully explain the modulation response of V-pit engineered MQW LEDs, which exhibit an S21 roll-off slower than −20 dB/decade. Using the proposed model and employing a gradient descent method, we extract effective recombination and escape lifetimes by averaging the carrier behavior across the quantum wells. Our results reveal slower effective carrier recombination and escape in MQW LEDs compared with LEDs emitting from a single QW, indicating the advantages of lower carrier density achieved through V-pit engineering. Notably, the effective carrier recombination time is more than one order of magnitude lower than the effective escape lifetime, suggesting that most carriers in the quantum wells recombine, while the escape process remains weak. To ensure the reliability and robustness of the MCLM, we subject it to a comprehensive threefold validation process. This work confirms the positive impact of spreading carriers into several quantum wells through V-pit engineering. In addition, the MCLM is applicable to other LEDs with a non-uniform carrier distribution, such as micro-LEDs with significant surface recombination and non-uniform lateral carrier profiles.
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来源期刊
Journal of Applied Physics
Journal of Applied Physics 物理-物理:应用
CiteScore
5.40
自引率
9.40%
发文量
1534
审稿时长
2.3 months
期刊介绍: The Journal of Applied Physics (JAP) is an influential international journal publishing significant new experimental and theoretical results of applied physics research. Topics covered in JAP are diverse and reflect the most current applied physics research, including: Dielectrics, ferroelectrics, and multiferroics- Electrical discharges, plasmas, and plasma-surface interactions- Emerging, interdisciplinary, and other fields of applied physics- Magnetism, spintronics, and superconductivity- Organic-Inorganic systems, including organic electronics- Photonics, plasmonics, photovoltaics, lasers, optical materials, and phenomena- Physics of devices and sensors- Physics of materials, including electrical, thermal, mechanical and other properties- Physics of matter under extreme conditions- Physics of nanoscale and low-dimensional systems, including atomic and quantum phenomena- Physics of semiconductors- Soft matter, fluids, and biophysics- Thin films, interfaces, and surfaces
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