在电子束精炼过程中测量硅熔体温度

IF 0.5 4区工程技术 Q4 MECHANICS

Journal of Applied Mechanics and Technical Physics Pub Date : 2024-01-15 DOI:10.1134/S0021894423050048

V. G. Shchukin, V. O. Konstantinov

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引用次数: 0

摘要

摘要提出了一种在等离子体-化学电子束精炼过程中测量硅熔体温度的方法。该方法基于测量熔体在红外线范围内的辐射强度，并将其与温度进行比较。结果表明，改变精炼条件，特别是电子束电流，可控制精炼硅的温度从 1500 K 升至 2600 K。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

MEASUREMENT OF SILICON MELT TEMPERATURE DURING ELECTRON BEAM REFINING

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MEASUREMENT OF SILICON MELT TEMPERATURE DURING ELECTRON BEAM REFINING

A method for measuring the temperature of the silicon melt during plasma-chemical electron-beam refining is proposed. The method is based on measuring the radiation intensity from the melt in the infrared range and comparing it with the temperature. It is established that changing the refining conditions, in particular, the electron beam current allows a controlled change in the temperature refined silicon from 1500 K to 2600 K.

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来源期刊

Journal of Applied Mechanics and Technical Physics 物理-力学

CiteScore

1.20

自引率

16.70%

发文量

审稿时长

4-8 weeks

期刊介绍： Journal of Applied Mechanics and Technical Physics is a journal published in collaboration with the Siberian Branch of the Russian Academy of Sciences. The Journal presents papers on fluid mechanics and applied physics. Each issue contains valuable contributions on hypersonic flows; boundary layer theory; turbulence and hydrodynamic stability; free boundary flows; plasma physics; shock waves; explosives and detonation processes; combustion theory; multiphase flows; heat and mass transfer; composite materials and thermal properties of new materials, plasticity, creep, and failure.