Sn2P2S6 晶体介电渗透率的低温反常现象

Pub Date : 2024-01-11 DOI:10.1063/10.0023893

H. Ban, D. Gal, A. Kohutych, A. Molnar

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引用次数: 0

摘要

研究了 Sn2P2S6 晶体介电常数的低温异常现象。结果表明，这些现象具有弛豫特性，所观察到的异常可能与含有锡和硫空位的晶格中的小孔极子动力学以及供体-受体补偿过程有关。为了证实这一点，我们测量了富锡和富硫晶体的介电性能。结果表明，偏离化学计量会导致介电损耗的低温异常发生显著变化。

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Low-temperature anomalies of the dielectric permeability of Sn2P2S6 crystals

Low-temperature anomalies of dielectric permittivity of Sn2P2S6 crystals were investigated. It is shown that these phenomena have a relaxation character and the observed anomalies could be related to the small hole polarons dynamics with donor-acceptor compensation processes in lattice with tin and sulfur vacancies. To confirm it, we measured the dielectric properties of tin-enriched and sulfur-enriched crystals. It is shown that deviation from stoichiometry leads to a significant change in the low-temperature anomalies of dielectric losses.

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