设计用于微波单光子计数器量子测量的深冷超低耗散放大器和测量单元

IF 0.6 4区物理与天体物理 Q4 PHYSICS, APPLIED

Low Temperature Physics Pub Date : 2024-01-11 DOI:10.1063/10.0023896

O. G. Turutanov, A. M. Korolev, V. I. Shnyrkov, A. P. Shapovalov, M. Baránek, S. Kern, V. Yu. Lyakhno, P. Neilinger, M. Grajcar

{"title":"设计用于微波单光子计数器量子测量的深冷超低耗散放大器和测量单元","authors":"O. G. Turutanov, A. M. Korolev, V. I. Shnyrkov, A. P. Shapovalov, M. Baránek, S. Kern, V. Yu. Lyakhno, P. Neilinger, M. Grajcar","doi":"10.1063/10.0023896","DOIUrl":null,"url":null,"abstract":"The requirements and details of designing a measuring cell and low-back-action deeply-cooled amplifier for quantum measurements at 10 mK are discussed. This equipment is a part of a microwave single-photon counter based on a superconducting flux qubit. The high-electron mobility transistors (HEMTs) in the amplifier operate in unsaturated microcurrent regime and dissipate only 1 μW of dc power per transistor. Simulated amplifier gain is 15 dB at 450 MHz with a high-impedance (≈ 5 kΩ) signal source and standard 50-Ω output.","PeriodicalId":18077,"journal":{"name":"Low Temperature Physics","volume":null,"pages":null},"PeriodicalIF":0.6000,"publicationDate":"2024-01-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design of deeply cooled ultra-low dissipation amplifier and measuring cell for quantum measurements with a microwave single-photon counter\",\"authors\":\"O. G. Turutanov, A. M. Korolev, V. I. Shnyrkov, A. P. Shapovalov, M. Baránek, S. Kern, V. Yu. Lyakhno, P. Neilinger, M. Grajcar\",\"doi\":\"10.1063/10.0023896\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The requirements and details of designing a measuring cell and low-back-action deeply-cooled amplifier for quantum measurements at 10 mK are discussed. This equipment is a part of a microwave single-photon counter based on a superconducting flux qubit. The high-electron mobility transistors (HEMTs) in the amplifier operate in unsaturated microcurrent regime and dissipate only 1 μW of dc power per transistor. Simulated amplifier gain is 15 dB at 450 MHz with a high-impedance (≈ 5 kΩ) signal source and standard 50-Ω output.\",\"PeriodicalId\":18077,\"journal\":{\"name\":\"Low Temperature Physics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.6000,\"publicationDate\":\"2024-01-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Low Temperature Physics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1063/10.0023896\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Low Temperature Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/10.0023896","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}

引用次数: 0

摘要

本文讨论了为在 10 mK 下进行量子测量而设计测量单元和低背动深冷放大器的要求和细节。该设备是基于超导通量量子比特的微波单光子计数器的一部分。放大器中的高电子迁移率晶体管（HEMT）在非饱和微电流状态下工作，每个晶体管的直流耗散功率仅为 1 μW。在 450 MHz 频率下，模拟放大器增益为 15 dB，采用高阻抗（≈ 5 kΩ）信号源和标准 50Ω 输出。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Design of deeply cooled ultra-low dissipation amplifier and measuring cell for quantum measurements with a microwave single-photon counter

The requirements and details of designing a measuring cell and low-back-action deeply-cooled amplifier for quantum measurements at 10 mK are discussed. This equipment is a part of a microwave single-photon counter based on a superconducting flux qubit. The high-electron mobility transistors (HEMTs) in the amplifier operate in unsaturated microcurrent regime and dissipate only 1 μW of dc power per transistor. Simulated amplifier gain is 15 dB at 450 MHz with a high-impedance (≈ 5 kΩ) signal source and standard 50-Ω output.

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来源期刊

Low Temperature Physics 物理-物理：应用

CiteScore

1.20

自引率

25.00%

发文量

138

审稿时长

3 months

期刊介绍： Guided by an international editorial board, Low Temperature Physics (LTP) communicates the results of important experimental and theoretical studies conducted at low temperatures. LTP offers key work in such areas as superconductivity, magnetism, lattice dynamics, quantum liquids and crystals, cryocrystals, low-dimensional and disordered systems, electronic properties of normal metals and alloys, and critical phenomena. The journal publishes original articles on new experimental and theoretical results as well as review articles, brief communications, memoirs, and biographies. Low Temperature Physics, a translation of the copyrighted Journal FIZIKA NIZKIKH TEMPERATUR, is a monthly journal containing English reports of current research in the field of the low temperature physics. The translation began with the 1975 issues. One volume is published annually beginning with the January issues.