UMG-Si 晶圆缺陷缓解策略综述

Rabin Basnet, Daniel Macdonald
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摘要

本综述重点探讨在硅光伏产业中利用升级冶金级硅(UMG-Si)的挑战和潜在途径。UMG-Si 是一种极具吸引力的低成本替代硅原料,但由于存在缺陷和杂质,其块状质量受到影响。本综述首先从文献调查中汲取启示,识别并讨论了在超导锗硅晶片中常见的各种缺陷和杂质。文中强调了这些缺陷对太阳能电池性能的不利影响。接下来,综述概述了为改善 UMG-Si 硅片的块状质量而采用的缺陷缓解策略。这些策略包括钝化、杂质去除和通过氢化进行缺陷/杂质钝化。通过考虑载流子寿命并将其与传统硅晶片的载流子寿命进行比较,对这些策略的有效性进行了评估。然后,综述研究了所报道的基于 UMG-Si 硅片的太阳能电池的开路电压和效率。此外,还对 UMG-Si 太阳能电池和传统硅电池的性能进行了比较。讨论了缺陷缓解策略对超低分子量硅太阳能电池性能的影响,强调了通过这些策略实现的改进。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A review of defect mitigation strategies for UMG-Si wafers
This review focuses on the challenges and potential pathways for utilizing upgraded metallurgical-grade silicon (UMG-Si) in the silicon photovoltaic industry. UMG-Si is an attractive low-cost alternative silicon feedstock, but its bulk quality is compromised due to the presence of defects and impurities. The review begins by identifying and discussing the various defects and impurities commonly found in UMG-Si wafers, drawing insights from a literature survey. The detrimental effects of these defects on solar cell performance are highlighted. Next, the review provides a summary of defect mitigation strategies that have been employed to improve the bulk quality of UMG-Si wafers. These strategies include tabula rasa, impurity gettering, and defect/impurity passivation through hydrogenation. The effectiveness of these strategies is evaluated by considering carrier lifetimes and comparing them with those of conventional silicon wafers. The review then examines the reported open-circuit voltages and efficiencies of solar cells based on UMG-Si wafers. A comparison is made between the performance of UMG-Si solar cells and those fabricated on conventional silicon. The impact of defect mitigation strategies on the performance of UMG-Si solar cells is discussed, emphasizing the improvements achieved through these strategies.
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