AlGaAs/InGaAs/GaAs 伪高电子迁移率晶体管中的低频噪声和缺陷

IF 2.7 3区 物理与天体物理 Q2 PHYSICS, APPLIED
X. Y. Luo, A. O'Hara, X. Li, P. F. Wang, E. X. Zhang, R. D. Schrimpf, S. T. Pantelides, D. M. Fleetwood
{"title":"AlGaAs/InGaAs/GaAs 伪高电子迁移率晶体管中的低频噪声和缺陷","authors":"X. Y. Luo, A. O'Hara, X. Li, P. F. Wang, E. X. Zhang, R. D. Schrimpf, S. T. Pantelides, D. M. Fleetwood","doi":"10.1063/5.0187747","DOIUrl":null,"url":null,"abstract":"Current–voltage characteristics and low-frequency (LF) noise of industrial-quality AlGaAs/InGaAs/GaAs pseudomorphic high-electron-mobility transistors are evaluated as a function of bias stress and temperature. A small positive shift of threshold voltage Vth and negligible degradation in peak transconductance GM are observed under ON-state bias conditions at elevated temperatures. The Vth measurements suggest activation of an acceptor-like defect or impurity center. The GM measurements demonstrate that newly activated defects are not located close enough to the two-dimensional electron gas to scatter carriers strongly. First-principles calculations and comparisons with previous work suggest that OAs impurity centers, other oxygen-related defects, isolated AsGa antisites, and dopant-based DX centers may contribute significantly to low-frequency (LF) noise in as-processed devices. LF noise is relatively unaffected by voltage stress at elevated temperatures, consistent with the small changes in Vth and peak GM.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":"1 1","pages":""},"PeriodicalIF":2.7000,"publicationDate":"2024-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Low-frequency noise and defects in AlGaAs/InGaAs/GaAs pseudomorphic high-electron mobility transistors\",\"authors\":\"X. Y. Luo, A. O'Hara, X. Li, P. F. Wang, E. X. Zhang, R. D. Schrimpf, S. T. Pantelides, D. M. Fleetwood\",\"doi\":\"10.1063/5.0187747\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Current–voltage characteristics and low-frequency (LF) noise of industrial-quality AlGaAs/InGaAs/GaAs pseudomorphic high-electron-mobility transistors are evaluated as a function of bias stress and temperature. A small positive shift of threshold voltage Vth and negligible degradation in peak transconductance GM are observed under ON-state bias conditions at elevated temperatures. The Vth measurements suggest activation of an acceptor-like defect or impurity center. The GM measurements demonstrate that newly activated defects are not located close enough to the two-dimensional electron gas to scatter carriers strongly. First-principles calculations and comparisons with previous work suggest that OAs impurity centers, other oxygen-related defects, isolated AsGa antisites, and dopant-based DX centers may contribute significantly to low-frequency (LF) noise in as-processed devices. LF noise is relatively unaffected by voltage stress at elevated temperatures, consistent with the small changes in Vth and peak GM.\",\"PeriodicalId\":15088,\"journal\":{\"name\":\"Journal of Applied Physics\",\"volume\":\"1 1\",\"pages\":\"\"},\"PeriodicalIF\":2.7000,\"publicationDate\":\"2024-01-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Applied Physics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1063/5.0187747\",\"RegionNum\":3,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Applied Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0187747","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0

摘要

评估了工业级 AlGaAs/InGaAs/GaAs 拟态高电子迁移率晶体管的电流-电压特性和低频(LF)噪声与偏压应力和温度的函数关系。在温度升高的导通偏压条件下,阈值电压 Vth 发生了微小的正移,峰值跨导 GM 的衰减可以忽略不计。Vth 测量结果表明,受体类缺陷或杂质中心被激活。GM 测量结果表明,新激活的缺陷与二维电子气的距离不够近,因此不会产生强烈的载流子散射。第一原理计算以及与以前工作的比较表明,OAs 杂质中心、其他与氧有关的缺陷、孤立的砷镓反相位以及基于掺杂剂的 DX 中心可能会对加工器件的低频(LF)噪声产生重大影响。低频噪声在高温下相对不受电压应力的影响,这与 Vth 和峰值 GM 的微小变化一致。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Low-frequency noise and defects in AlGaAs/InGaAs/GaAs pseudomorphic high-electron mobility transistors
Current–voltage characteristics and low-frequency (LF) noise of industrial-quality AlGaAs/InGaAs/GaAs pseudomorphic high-electron-mobility transistors are evaluated as a function of bias stress and temperature. A small positive shift of threshold voltage Vth and negligible degradation in peak transconductance GM are observed under ON-state bias conditions at elevated temperatures. The Vth measurements suggest activation of an acceptor-like defect or impurity center. The GM measurements demonstrate that newly activated defects are not located close enough to the two-dimensional electron gas to scatter carriers strongly. First-principles calculations and comparisons with previous work suggest that OAs impurity centers, other oxygen-related defects, isolated AsGa antisites, and dopant-based DX centers may contribute significantly to low-frequency (LF) noise in as-processed devices. LF noise is relatively unaffected by voltage stress at elevated temperatures, consistent with the small changes in Vth and peak GM.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Journal of Applied Physics
Journal of Applied Physics 物理-物理:应用
CiteScore
5.40
自引率
9.40%
发文量
1534
审稿时长
2.3 months
期刊介绍: The Journal of Applied Physics (JAP) is an influential international journal publishing significant new experimental and theoretical results of applied physics research. Topics covered in JAP are diverse and reflect the most current applied physics research, including: Dielectrics, ferroelectrics, and multiferroics- Electrical discharges, plasmas, and plasma-surface interactions- Emerging, interdisciplinary, and other fields of applied physics- Magnetism, spintronics, and superconductivity- Organic-Inorganic systems, including organic electronics- Photonics, plasmonics, photovoltaics, lasers, optical materials, and phenomena- Physics of devices and sensors- Physics of materials, including electrical, thermal, mechanical and other properties- Physics of matter under extreme conditions- Physics of nanoscale and low-dimensional systems, including atomic and quantum phenomena- Physics of semiconductors- Soft matter, fluids, and biophysics- Thin films, interfaces, and surfaces
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信