偏置钽/铂/钴/铁锰/钽抗蚀剂中的磁滞研究:结构尺寸的影响

IF 2.7 3区 物理与天体物理 Q2 PHYSICS, APPLIED
F. Fettar, L. Cagnon, D. Barral, P. David, L. Naudin, F. Blondelle, F. Gay
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引用次数: 0

摘要

关于由纳米孔六边形网络形成的反点阵磁结构中的矫顽力场和偏置场的值,文献中存在争议。与生长在连续基底(即 CML)上的相同磁性纳米结构相比,沉积在超薄阳极氧化铝(即 AAO)上的 antidots 的矫顽力场 (HC) 和交换偏置场 (∣HEXC∣) 要么增大,要么减小。我们建议通过说明磁化易轴、外加磁场方向、层厚度和纳米孔三维拓扑结构以及磁性测量的磁性和热历史的重要性来阐明这些争论。在此,通过在 5 K 条件下进行非凡霍尔效应测量,研究了偏置的 Ta(5 nm)/Pt(5 nm)/Co(0.6 nm)/Fe50Mn50(X)/Ta(5 nm) antidots,其中 X 在 (0-5.5) nm 范围内变化。衬底由六边形孔阵列组成,分别用一对(p,d)值来描述,周期为两个连续孔中心到中心的距离和孔直径。当 X=(2-5.5) nm 时,锑点的尺寸为(p≈100 和 d≈40 nm);当 X=3.5 nm 时,锑点的尺寸为(p≈150 和 d≈60 nm);当 X=0 时,锑点的尺寸为(p≈100 和 d≈60 nm)。当 X 增强时,两种基底的 HC 和 ∣HEXC∣ 都会逐渐增加,然而在连续系统中,当 X 高时,HC 和 ∣HEXC∣ 会有微弱的下降。只有在两个无偏样品、X=2 nm 的连续样品以及在 -2 T 条件下经过从 500 K 到 5 K 的场冷却处理的两个 X=5 nm 样品中才能观察到垂直磁各向异性。通常,HC(AAO)>HC(CML)、∣HEXC(AAO)∣>∣HEXC(CML)∣和∣HA(AAO)∣<∣HA(CML)∣(HA 表示各向异性场)。然而,在某些条件下,例如从高温和/或强磁场开始的 FC 过程,可能会出现其他情况。根据结构特征(楔刃间距、孔隙率或覆盖率),对连续和不连续样品的 HC、∣HEXC∣ 和各向异性场 (∣HA∣) 的振幅进行了讨论。这种偏压垂直反向点可能特别适用于自旋电子学的特定纳米材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Investigation of magnetic hysteresis in biased Ta/Pt/Co/FeMn/Ta antidots: Influence of structural dimensions
There exists a controversy in the literature concerning the values of coercive and bias fields in antidots magnetic structures formed by a hexagonal network of nanoholes. The coercive fields (HC) and the exchange bias fields (∣HEXC∣) for antidots (deposited on ultrathin anodic aluminum oxide, namely, AAO) are either increased or diminished by comparison with the same magnetic nanostructures grown on continuous substrates (namely, CML). We propose to elucidate these debates by showing the importance of the easy axis of the magnetization, the direction of the applied magnetic field, the thicknesses of the layers, and the 3D-topology of nanoholes, as well as the magnetic and thermal history of the magnetic measurements. Here, biased Ta(5 nm)/Pt(5 nm)/Co(0.6 nm)/Fe50Mn50(X)/Ta(5 nm) antidots are investigated by extraordinary Hall effect measurements at 5 K, where X varies in the (0–5.5) nm range. The substrate consists in a hexagonal array of holes, described by the pair of (p,d) values, respectively, the period as the distance from center to center of two consecutive holes and the hole diameter. The dimensions of antidots are (p≈100 and d≈40 nm) for X=(2–5.5) nm, (p≈150 and d≈60 nm) for X=3.5 nm, and (p≈100 and d≈60 nm) for X=0. A continuous stack using Si/SiO2(100 nm) is used for comparison. HC and ∣HEXC∣ gradually increase when X is enhanced for both substrates, with nevertheless a weak decrease at high X for the continuous system. Perpendicular magnetic anisotropy is only observed for both unbiased samples, the X=2 nm continuous sample, and both X=5 nm samples that have undergone field cooling treatment from 500 to 5 K under −2 T. Usually, HC(AAO)>HC(CML), ∣HEXC(AAO)∣>∣HEXC(CML)∣, and ∣HA(AAO)∣<∣HA(CML)∣ (HA designating the anisotropy field). However, for certain conditions, as, for instance, for FC-procedures starting from high temperatures and/or strong magnetic field, other situations might be observed. A discussion pertaining to the amplitudes of HC, ∣HEXC∣ and the anisotropy field (∣HA∣) of continuous and discontinuous samples is given for our experimental results as well as for published data in the literature, in the light of structural characteristics (wedge-to-wedge distance, porosity, or coverage ratio). Such biased perpendicular antidots might be particularly used in specific nanomaterials devoted to spintronics.
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来源期刊
Journal of Applied Physics
Journal of Applied Physics 物理-物理:应用
CiteScore
5.40
自引率
9.40%
发文量
1534
审稿时长
2.3 months
期刊介绍: The Journal of Applied Physics (JAP) is an influential international journal publishing significant new experimental and theoretical results of applied physics research. Topics covered in JAP are diverse and reflect the most current applied physics research, including: Dielectrics, ferroelectrics, and multiferroics- Electrical discharges, plasmas, and plasma-surface interactions- Emerging, interdisciplinary, and other fields of applied physics- Magnetism, spintronics, and superconductivity- Organic-Inorganic systems, including organic electronics- Photonics, plasmonics, photovoltaics, lasers, optical materials, and phenomena- Physics of devices and sensors- Physics of materials, including electrical, thermal, mechanical and other properties- Physics of matter under extreme conditions- Physics of nanoscale and low-dimensional systems, including atomic and quantum phenomena- Physics of semiconductors- Soft matter, fluids, and biophysics- Thin films, interfaces, and surfaces
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