{"title":"碳化硅砂在硅晶体管结构反面加工技术中的应用","authors":"A. R. Shakhmayeva, E. Kazalieva","doi":"10.14489/glc.2023.06.pp.069-072","DOIUrl":null,"url":null,"abstract":"A method is proposed for processing the reverse side of silicon transistor structures before the metal deposition process and obtaining contact to the collector of the transistor being formed. The parameters of the surface roughness of the silicon surface treated with carbide–silicon sand are studied in order to improve the adhesive properties before spraying the contact to the collector region of the transistor.","PeriodicalId":445802,"journal":{"name":"Steklo i Keramika","volume":"17 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"APPLICATION OF SILICON CARBIDE SAND IN THE TECHNOLOGY OF PROCESSING THE REVERSE SIDE OF SILICON TRANSISTOR STRUCTURES\",\"authors\":\"A. R. Shakhmayeva, E. Kazalieva\",\"doi\":\"10.14489/glc.2023.06.pp.069-072\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A method is proposed for processing the reverse side of silicon transistor structures before the metal deposition process and obtaining contact to the collector of the transistor being formed. The parameters of the surface roughness of the silicon surface treated with carbide–silicon sand are studied in order to improve the adhesive properties before spraying the contact to the collector region of the transistor.\",\"PeriodicalId\":445802,\"journal\":{\"name\":\"Steklo i Keramika\",\"volume\":\"17 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Steklo i Keramika\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.14489/glc.2023.06.pp.069-072\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Steklo i Keramika","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.14489/glc.2023.06.pp.069-072","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
APPLICATION OF SILICON CARBIDE SAND IN THE TECHNOLOGY OF PROCESSING THE REVERSE SIDE OF SILICON TRANSISTOR STRUCTURES
A method is proposed for processing the reverse side of silicon transistor structures before the metal deposition process and obtaining contact to the collector of the transistor being formed. The parameters of the surface roughness of the silicon surface treated with carbide–silicon sand are studied in order to improve the adhesive properties before spraying the contact to the collector region of the transistor.
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