压电 Zr3GeO8 晶体的物理特性

M. Erzen
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引用次数: 0

摘要

基于密度泛函理论的第一性原理计算,计算了 Zr3GeO8 晶体的结构、电子带结构、状态密度、线性光学性质、动态性质和热力学性质。根据对 Zr3GeO8 晶体的结构优化和电子带结构计算,其带隙为 4.4663 eV,并得出其具有间接带隙。根据 Zr3GeO8 晶体的线性光学特性,计算了基态的线性光学特性和一些常数,如能量损失函数、反射率和吸收系数。还计算了 Zr3GeO8 晶体的声子分布、态密度以及每个原子对态密度的贡献。最后,与所有计算一样,在局部密度近似条件下计算了 Zr3GeO8 晶体的自由能、内能、熵和热容量。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Physical Properties of Piezoelectric Zr3GeO8 Crystal
Based on first-principal calculations using density functional theory, the structural, electronic band structure, density of state, linear optical properties, dynamic properties, and thermodynamic properties have been calculated for the Zr3GeO8 crystal. According to the structural optimization and electronic band structure calculation of the Zr3GeO8 crystal, the band gap is 4.4663 eV and it has been obtained that it has an indirect band gap. For the Zr3GeO8 crystal, linear optical properties in the ground state and some constants such as energy loss functions, reflectivity and absorption coefficient are calculated depending on the linear optical properties. The phonon distribution of the Zr3GeO8 crystal, the density of the state and the contribution of each atom to the state density were calculated. Finally, the free energy, internal energy, entropy, and heat capacity for the Zr3GeO8 crystal were calculated under the local density approximation as in all calculations.
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