Meng Zhang, Zhong Fang, Yu Hao, Wei Du, Xuchao Pan, Jun-jie Jiao, Yong He
{"title":"通过 PCI 测试研究导航接收器的电磁损伤效应","authors":"Meng Zhang, Zhong Fang, Yu Hao, Wei Du, Xuchao Pan, Jun-jie Jiao, Yong He","doi":"10.56028/aetr.8.1.294.2023","DOIUrl":null,"url":null,"abstract":"The EMP couples with electronic devices via cables, inducing electromagnetic damage effects. This paper elucidates the operational principles of a navigation receiver and simplifies the study by focusing on the radio frequency front-end module. Many PCI tests were conducted on its signal input port, yielding the damage threshold of the navigation receiver. An analysis of the output waveforms of the modules that incurred damage was also performed. Through infrared research, it was discovered that the damaged LNA experiences a rapid temperature rise to around 73°C during operation with applied power. The electromagnetic damage effect in the LNA primarily stems from internal MOS transistor short circuits. The BPF protects the subsequent circuit stages but is also susceptible to damage.","PeriodicalId":502380,"journal":{"name":"Advances in Engineering Technology Research","volume":"10 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2023-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Research on Electromagnetic Damage Effects in Navigation Receiver by PCI Testing\",\"authors\":\"Meng Zhang, Zhong Fang, Yu Hao, Wei Du, Xuchao Pan, Jun-jie Jiao, Yong He\",\"doi\":\"10.56028/aetr.8.1.294.2023\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The EMP couples with electronic devices via cables, inducing electromagnetic damage effects. This paper elucidates the operational principles of a navigation receiver and simplifies the study by focusing on the radio frequency front-end module. Many PCI tests were conducted on its signal input port, yielding the damage threshold of the navigation receiver. An analysis of the output waveforms of the modules that incurred damage was also performed. Through infrared research, it was discovered that the damaged LNA experiences a rapid temperature rise to around 73°C during operation with applied power. The electromagnetic damage effect in the LNA primarily stems from internal MOS transistor short circuits. The BPF protects the subsequent circuit stages but is also susceptible to damage.\",\"PeriodicalId\":502380,\"journal\":{\"name\":\"Advances in Engineering Technology Research\",\"volume\":\"10 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-10-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advances in Engineering Technology Research\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.56028/aetr.8.1.294.2023\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advances in Engineering Technology Research","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.56028/aetr.8.1.294.2023","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Research on Electromagnetic Damage Effects in Navigation Receiver by PCI Testing
The EMP couples with electronic devices via cables, inducing electromagnetic damage effects. This paper elucidates the operational principles of a navigation receiver and simplifies the study by focusing on the radio frequency front-end module. Many PCI tests were conducted on its signal input port, yielding the damage threshold of the navigation receiver. An analysis of the output waveforms of the modules that incurred damage was also performed. Through infrared research, it was discovered that the damaged LNA experiences a rapid temperature rise to around 73°C during operation with applied power. The electromagnetic damage effect in the LNA primarily stems from internal MOS transistor short circuits. The BPF protects the subsequent circuit stages but is also susceptible to damage.