{"title":"利用 CNT 光栅结构提高 SiGe 薄膜太阳能电池的效率","authors":"H. H. Madani, M. R. Shayesteh, M. R. Moslemi","doi":"10.15251/jor.2023.196.631","DOIUrl":null,"url":null,"abstract":"In this paper, a new structure of SiGe thin film solar cell using a carbon nanotubes (CNT) grating layer is proposed. CNT grating layer is used which reduces the reflection loss from the surface and maximizing optical absorption in the active layer of the cell. In order to reduce the carrier recombination in the back contact, a GaAs back-surface field (BSF) layer was used. The simulation results show that the efficiency of the proposed structure is 29.32%. Furthermore, we were able to increase the efficiency to 31.3% by optimizing the structural parameters including the depth and number of grating periods.","PeriodicalId":54394,"journal":{"name":"Journal of Ovonic Research","volume":"40 1","pages":""},"PeriodicalIF":1.0000,"publicationDate":"2023-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Efficiency enhancement in SiGe thin film solar cell by a CNT grating structure\",\"authors\":\"H. H. Madani, M. R. Shayesteh, M. R. Moslemi\",\"doi\":\"10.15251/jor.2023.196.631\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a new structure of SiGe thin film solar cell using a carbon nanotubes (CNT) grating layer is proposed. CNT grating layer is used which reduces the reflection loss from the surface and maximizing optical absorption in the active layer of the cell. In order to reduce the carrier recombination in the back contact, a GaAs back-surface field (BSF) layer was used. The simulation results show that the efficiency of the proposed structure is 29.32%. Furthermore, we were able to increase the efficiency to 31.3% by optimizing the structural parameters including the depth and number of grating periods.\",\"PeriodicalId\":54394,\"journal\":{\"name\":\"Journal of Ovonic Research\",\"volume\":\"40 1\",\"pages\":\"\"},\"PeriodicalIF\":1.0000,\"publicationDate\":\"2023-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Ovonic Research\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.15251/jor.2023.196.631\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Ovonic Research","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.15251/jor.2023.196.631","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Efficiency enhancement in SiGe thin film solar cell by a CNT grating structure
In this paper, a new structure of SiGe thin film solar cell using a carbon nanotubes (CNT) grating layer is proposed. CNT grating layer is used which reduces the reflection loss from the surface and maximizing optical absorption in the active layer of the cell. In order to reduce the carrier recombination in the back contact, a GaAs back-surface field (BSF) layer was used. The simulation results show that the efficiency of the proposed structure is 29.32%. Furthermore, we were able to increase the efficiency to 31.3% by optimizing the structural parameters including the depth and number of grating periods.
期刊介绍:
Journal of Ovonic Research (JOR) appears with six issues per year and is open to the reviews, papers, short communications and breakings news inserted as Short Notes, in the field of ovonic (mainly chalcogenide) materials for memories, smart materials based on ovonic materials (combinations of various elements including chalcogenides), materials with nano-structures based on various alloys, as well as semiconducting materials and alloys based on amorphous silicon, germanium, carbon in their various nanostructured forms, either simple or doped/alloyed with hydrogen, fluorine, chlorine and other elements of high interest for applications in electronics and optoelectronics. Papers on minerals with possible applications in electronics and optoelectronics are encouraged.