将银浆和 H3PO4 溶液的混合物作为硅太阳能电池触点形成的掺杂浆料的浓度系数

IF 1 4区 材料科学
N. A. M. Sinin, A. R. M. Rais, K. Sopian, M. A. Ibrahim
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引用次数: 0

摘要

丝网印刷掺杂剂是一种在太阳能电池上制造发射极区域的新技术。在发射区的顶部,会有丝网印刷的金属触点,通常使用银作为前触点。这两种工艺都是单独进行的,需要两种不同的高温扩散工艺。无论是轻掺杂还是重掺杂,银都能产生良好的欧姆接触。我们提出了一种解决方案,即采用银和磷酸的丝网印刷和退火工艺的单一步骤。通过在 900℃ 恒温下退火,同时以 10 秒为间隔改变退火时间(10-40 秒),将铝、银、银/磷丝网印刷浆料同时退火,在 n 型和 p 型硅晶片上形成了在银触点下具有和不具有重掺磷层的二极管。通过使用 FESEM 和 EDX 报告测量 5%和 10%的 Ag/P 的横截面图像,确定了 Ag/P 浆料中磷的存在。暗 IV 显示 p 型和 n 型都有欧姆接触。在丝网印刷工艺中形成 Ag/P 浆料的能力使其适合用作太阳能电池中的自掺杂浆料工艺。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The concentration factor on the mixture of Ag paste and H3PO4 solution as a dopant paste for contact formation in silicon solar cells
Screen printing dopant is a new technique to create emitter regions on solar cells. On top of the emitter region, there will be screen-printed metallic contacts that are commonly used silver as front contact. Both processes are performed in separate procedure which requires two different diffusion process involving a high-temperature process. Silver makes good ohmic contact on both light and heavily doped. A solution is proposed by applying a single step of screen printing and annealing process of Ag and phosphorus acid. Simultaneous annealing of Al, Ag, Ag/P screen-printed pastes form diodes with and without heavily doped phosphorous layers under Ag contacts on n-type and p-type silicon wafers by annealing at a constant temperature of 900℃ while varying annealing time from 10-40 seconds at a 10-second interval. The cross-section image of 5% and 10% of Ag/P was measured by using FESEM with EDX report has identified the presence of phosphorus in the Ag/P paste. Dark IV shows an ohmic contact for both p- and n-type. The ability to form the Ag/P paste in the screen-printing process makes it amenable to use as a self-dopant paste process in solar cells.
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来源期刊
Journal of Ovonic Research
Journal of Ovonic Research Materials Science-Electronic, Optical and Magnetic Materials
CiteScore
1.60
自引率
20.00%
发文量
77
期刊介绍: Journal of Ovonic Research (JOR) appears with six issues per year and is open to the reviews, papers, short communications and breakings news inserted as Short Notes, in the field of ovonic (mainly chalcogenide) materials for memories, smart materials based on ovonic materials (combinations of various elements including chalcogenides), materials with nano-structures based on various alloys, as well as semiconducting materials and alloys based on amorphous silicon, germanium, carbon in their various nanostructured forms, either simple or doped/alloyed with hydrogen, fluorine, chlorine and other elements of high interest for applications in electronics and optoelectronics. Papers on minerals with possible applications in electronics and optoelectronics are encouraged.
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