对样品和模具几何参数进行数值优化,以提高 TiC 陶瓷火花等离子烧结过程中的可达到温度

Saeed Mohammad Bagheri, Mohsen Naderi, M. Vajdi, Farhad Sadegh Moghanlou, Ali Tarlani Beris
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引用次数: 0

摘要

本研究对碳化钛(TiC)样品的火花等离子烧结(SPS)进行了全面的热建模。研究利用 COMSOL Multiphysics 软件,对位于石墨模具内的 TiC 样品的温度分布进行了研究。研究采用了热扩散控制方程,并增加了焦耳加热项,以计算温度变化。研究明确考虑了边界条件,特别是系统的上限和下限,并将冷却机制模拟为对流。通过应用田口方法和方差分析(ANOVA),研究确定烧结样品的直径是影响 TiC 样品中心最高温度的最重要参数,其显著性约为 87%。其次是石墨模具的外径,显著性略高于 10%,TiC 样品的厚度显著性约为 2%。这些发现有助于深入理解 SPS 工艺,为优化烧结参数提供了宝贵的见解。数值结果进一步强调了特定几何参数在 SPS 过程中的重要性。这项研究为今后旨在改进 TiC 样品和其他材料 SPS 工艺的研究奠定了坚实的基础。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Numerical optimization of sample and die geometric parameters to increase the attainable temperature during spark plasma sintering of TiC ceramics
The present study offers a comprehensive thermal modeling of spark plasma sintering (SPS) for a titanium carbide (TiC) sample. Utilizing COMSOL Multiphysics Software, the research investigates the temperature distribution within the TiC sample, situated within a graphite die. The study employs governing equations for heat diffusion, augmented by terms accounting for Joule heating, to calculate temperature variations. Boundary conditions, particularly at the upper and lower limits of the system, are explicitly accounted for, with cooling mechanisms modeled as convection. Through the application of the Taguchi method and Analysis of Variance (ANOVA), the study identifies the diameter of the sintering sample as the most significant parameter affecting the maximum temperature at the center of the TiC sample, with a significance of about 87%. The outer diameter of the graphite die followed with a significance of slightly more than 10%, and the thickness of the TiC sample had a significance of around 2%. The findings contribute to a nuanced understanding of the SPS process, offering valuable insights for optimizing the sintering parameters. Numerical results further underscore the importance of specific geometric parameters in the SPS process. This study serves as a robust foundation for future research aimed at refining the SPS process for TiC samples and other materials.
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