AlAs 晶体合金中的电子结构和禁能

César Cabrera, Salvador A. Trujillo, German E. Pomachagua
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引用次数: 0

摘要

我们介绍了在密度泛函理论(DFT)框架内用 LMTO 轨道法计算的 AlAs 晶体化合物的能带和 DOS、禁能和总能。Se 利用局部密度近似(LDA)中的电位求解了薛定谔方程,该近似使用巴赫-海丁近似来计算交换和相关项。计算时,空球中的电子电荷只占很小的均质部分,而晶格原子球中的电子电荷与自由原子的电子电荷相似。能带结构呈现出 0.160Ry 或 2.18 eV 的间接禁止能隙,最小总能量为 -18.10 Ry,与实验结果非常吻合。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electronic Structure and Forbidden Energy in AlAs Crystalline Alloy
We present the energy bands and the DOS, the forbidden energy and total energy of the crystalline compound of AlAs, calculated with the LMTO orbital method within the framework of density functional theory (DFT). Se solved the Schrödinger equation with a potential in the local density approximation (LDA) that uses the Barh-Hedin approximation for the term exchange and correlation. Potential calculated with a small homogeneous fraction of electron charge in the empty spheres and an electronic charge similar to that of the free atom in the atomic spheres of the crystal lattice. The structure of the energy bands presented an indirect forbidden energy gap of 0.160Ry or 2.18 eV with a minimum total energy of -18.10 Ry that fit well with the experimental results
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