论多层硅结构中二氧化硅-二氧化硅过渡层的特性

IF 1 Q3 PHYSICS, MULTIDISCIPLINARY

East European Journal of Physics Pub Date : 2023-12-02 DOI:10.26565/2312-4334-2023-4-25

S. Daliev, F. A. Saparov

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引用次数: 0

摘要

利用电容光谱法研究了通过半导体热氧化法制造的 Al-SiO2-n-Si 型样品中带有 Si-SiO2 过渡层的多层结构的电容电压特性。结果表明，表面态密度的不均匀分布是由于过势垒电荷发射或杂质中心热电离造成的半导体-电介质界面上的局部电活性中心。

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On the Properties of the Si-SiO2 Transition Layer in Multilayer Silicon Structures

Capacitance spectroscopy was used to study the capacitive-voltage characteristics of multilayer structures with a Si-SiO2 transition layer in Al-SiO2-n-Si type samples fabricated by the thermal oxidation of a semiconductor. It is shown that the inhomogeneous distribution of the density of surface states is a localized electroactive center at the very semiconductor-dielectric interface, due to over-barrier charge emission or thermal ionization of impurity centers.

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来源期刊

East European Journal of Physics PHYSICS, MULTIDISCIPLINARY-

CiteScore

1.10

自引率

25.00%

发文量

审稿时长

8 weeks