Influence of silicon characteristics on the parameters of manufactured photonics cells

The paper investigates the influence of the electrophysical characteristics of silicon on the final parameters of photoelectronic elements using p-i-n photodiodes as an example. It has been found that photodiode samples made on the basis of silicon with a higher resistivity are more prone to the formation of inversion channels at the oxide-semiconductor interface. Also, the dark current and responsivity of such photodiodes reach saturation at a lower voltage. It has also been shown that silicon-based photodiodes with a longer lifetime of non-basic charge carriers have lower dark current values. It has been shown that products with crystallographic orientation [111] have a much lower density of surface dislocations after technological operations than in the case of silicon with orientation [100]. It was also found that materials with different crystallographic orientations have different phosphorus diffusion coefficients. It has been experimentally established that a silicon oxide film grows faster on the surface of crystallographic orientation silicon [111] than on the surface of crystallographic orientation silicon [100]. This is due to the difference in the surface density of silicon atoms inherent in different crystallographic planes.