在反应混合物中通过热靶脉冲磁控管沉积制备氧化硅薄膜

IF 0.4 4区计算机科学 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Communications Technology and Electronics Pub Date : 2024-01-02 DOI:10.1134/s1064226923070070

V. Yu. Lisenkov, M. M. Kharkov, D. V. Kolodko, A. V. Tumarkin, A. V. Kaziev

{"title":"在反应混合物中通过热靶脉冲磁控管沉积制备氧化硅薄膜","authors":"V. Yu. Lisenkov, M. M. Kharkov, D. V. Kolodko, A. V. Tumarkin, A. V. Kaziev","doi":"10.1134/s1064226923070070","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3>The modes of maintaining a pulsed magnetron discharge with a hot thermally insulated silicon target during operation in oxygen-containing gas mixtures (Ar + O2) have been studied. The range of the average power density at the target was 60–120 W/cm2 at a pulse duration of 100–300 µs and a repetition rate of 0.5–2 kHz. Maps of stable operating modes of the sputtering system have been determined. SixOy coatings were prepared on single-crystal silicon substrates at different values of the oxygen fraction in the gas flow and various parameters of the magnetron pulsed power supply and diagnosed.","PeriodicalId":50229,"journal":{"name":"Journal of Communications Technology and Electronics","volume":"40 1","pages":""},"PeriodicalIF":0.4000,"publicationDate":"2024-01-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Preparation of Silicon Oxide Films by a Hot-Target Impulse Magnetron Deposition in a Reactive Mixture\",\"authors\":\"V. Yu. Lisenkov, M. M. Kharkov, D. V. Kolodko, A. V. Tumarkin, A. V. Kaziev\",\"doi\":\"10.1134/s1064226923070070\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<h3 data-test=\\\"abstract-sub-heading\\\">Abstract</h3>The modes of maintaining a pulsed magnetron discharge with a hot thermally insulated silicon target during operation in oxygen-containing gas mixtures (Ar + O2) have been studied. The range of the average power density at the target was 60–120 W/cm2 at a pulse duration of 100–300 µs and a repetition rate of 0.5–2 kHz. Maps of stable operating modes of the sputtering system have been determined. SixOy coatings were prepared on single-crystal silicon substrates at different values of the oxygen fraction in the gas flow and various parameters of the magnetron pulsed power supply and diagnosed.\",\"PeriodicalId\":50229,\"journal\":{\"name\":\"Journal of Communications Technology and Electronics\",\"volume\":\"40 1\",\"pages\":\"\"},\"PeriodicalIF\":0.4000,\"publicationDate\":\"2024-01-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Communications Technology and Electronics\",\"FirstCategoryId\":\"94\",\"ListUrlMain\":\"https://doi.org/10.1134/s1064226923070070\",\"RegionNum\":4,\"RegionCategory\":\"计算机科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Communications Technology and Electronics","FirstCategoryId":"94","ListUrlMain":"https://doi.org/10.1134/s1064226923070070","RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

摘要研究了在含氧混合气体（Ar + O2）中使用热绝缘硅靶保持脉冲磁控管放电的模式。在脉冲持续时间为 100-300 µs 和重复频率为 0.5-2 kHz 的条件下，靶的平均功率密度范围为 60-120 W/cm2。确定了溅射系统的稳定工作模式图。在气流中氧含量不同、磁控管脉冲电源和诊断参数不同的情况下，在单晶硅基片上制备了六氧涂层。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Preparation of Silicon Oxide Films by a Hot-Target Impulse Magnetron Deposition in a Reactive Mixture

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Preparation of Silicon Oxide Films by a Hot-Target Impulse Magnetron Deposition in a Reactive Mixture

Abstract

The modes of maintaining a pulsed magnetron discharge with a hot thermally insulated silicon target during operation in oxygen-containing gas mixtures (Ar + O₂) have been studied. The range of the average power density at the target was 60–120 W/cm² at a pulse duration of 100–300 µs and a repetition rate of 0.5–2 kHz. Maps of stable operating modes of the sputtering system have been determined. Si_xO_y coatings were prepared on single-crystal silicon substrates at different values of the oxygen fraction in the gas flow and various parameters of the magnetron pulsed power supply and diagnosed.

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来源期刊

Journal of Communications Technology and Electronics 工程技术-电信学

CiteScore

1.00

自引率

20.00%

发文量

170

审稿时长

10.5 months

期刊介绍： Journal of Communications Technology and Electronics is a journal that publishes articles on a broad spectrum of theoretical, fundamental, and applied issues of radio engineering, communication, and electron physics. It publishes original articles from the leading scientific and research centers. The journal covers all essential branches of electromagnetics, wave propagation theory, signal processing, transmission lines, telecommunications, physics of semiconductors, and physical processes in electron devices, as well as applications in biology, medicine, microelectronics, nanoelectronics, electron and ion emission, etc.