A. H. M. Almawgani, K. Srilatha, B. T. P. Madhav, B. Venkatesh, C. V. S. A. Sravan, M. C. Rao, A. R. H. Alhawari
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引用次数: 0
摘要
摘要 设计了一种具有独立入射角和吸收角的槽环结构元面吸收器，适用于 S 波段和 C 波段应用。元表面单元单元由内部连接环形结构的方形槽组成。所提出的吸收器支持不敏感的极化角。元表面吸收器在两个共振频率上显示出阻抗匹配，吸收率百分比最高。拟议的元表面具有双频特性，频率分别为 3.2 和 7.6 千兆赫。对于横向磁（TM）和横向电（TE）模式，吸收率分别达到 90% 和 80% 以上。元表面吸收器的设计使用了厚度为 0.1 毫米的聚酰亚胺衬底。从电场和表面电流分布图可以看出吸收现象。此外，还解释了介电常数和磁导率，以分析元表面的特性。对元表面吸收器进行了原型设计，并对模拟吸收器的结果进行了测量，结果表明两者的记录都很好。
Dual Band Metasurface Absorber with Insensitive Polarization and Incidence Angle for S and C Band Applications
Abstract
A slotted loop structured metasurface absorber has been designed with an independent angle of incidence and absorption useful for S and C band applications. The metasurface unit cell consists of square slots with an internally attached loop structure. The proposed absorber supports an insensitive angle of polarization. Metasurface absorber shows impedance matching at two resonating frequencies with the highest percentage of absorptivity. The proposed metasurface exhibits dual band characteristics which are at 3.2 and 7.6 GHz. For the transverse magnetic (TM) and transverse electric (TE) modes the absorptivity is obtained at 90 and 80% above values. The metasurface absorber is designed using a polyimide substrate having a thickness of 0.1 mm. The phenomenon of absorption is obtained in terms of E-field and surface current distribution patterns. Also, permittivity and permeability have been explained to analyze the metasurface’s properties. The metasurface absorber was prototyped and the results are measured for the simulated one and shows that both the results are in a good record.
期刊介绍：
Journal of Communications Technology and Electronics is a journal that publishes articles on a broad spectrum of theoretical, fundamental, and applied issues of radio engineering, communication, and electron physics. It publishes original articles from the leading scientific and research centers. The journal covers all essential branches of electromagnetics, wave propagation theory, signal processing, transmission lines, telecommunications, physics of semiconductors, and physical processes in electron devices, as well as applications in biology, medicine, microelectronics, nanoelectronics, electron and ion emission, etc.
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