I. M. Karandashev, G. S. Teplov, A. A. Karmanov, V. V. Keremet, A. V. Kuzovkov
{"title":"研究在基于反向光刻技术的 90 纳米光掩膜生成中使用 U-Net、Erf-Net 和 DeepLabV3 架构的效率","authors":"I. M. Karandashev, G. S. Teplov, A. A. Karmanov, V. V. Keremet, A. V. Kuzovkov","doi":"10.3103/S1060992X23040094","DOIUrl":null,"url":null,"abstract":"<p>The paper deals with the inverse problem of computational lithography. We turn to deep neural network algorithms to compute photomask topologies. The chief goal of the research is to understand how efficient the neural net architectures such as U-net, Erf-Net and Deep Lab v.3, as well as built-in Calibre Workbench algorithms, can be in tackling inverse lithography problems. Specially generated and marked data sets are used to train the artificial neural nets. Calibre EDA software is used to generate haphazard patterns for a 90 nm transistor gate mask. The accuracy and speed parameters are used for the comparison. The edge placement error (EPE) and intersection over union (IOU) are used as metrics. The use of the neural nets allows two orders of magnitude reduction of the mask computation time, with accuracy keeping to 92% for the IOU metric.</p>","PeriodicalId":721,"journal":{"name":"Optical Memory and Neural Networks","volume":"32 4","pages":"219 - 225"},"PeriodicalIF":1.0000,"publicationDate":"2023-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.3103/S1060992X23040094.pdf","citationCount":"0","resultStr":"{\"title\":\"Investigating the Efficiency of Using U-Net, Erf-Net and DeepLabV3 Architectures in Inverse Lithography-based 90-nm Photomask Generation\",\"authors\":\"I. M. Karandashev, G. S. Teplov, A. A. Karmanov, V. V. Keremet, A. V. Kuzovkov\",\"doi\":\"10.3103/S1060992X23040094\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>The paper deals with the inverse problem of computational lithography. We turn to deep neural network algorithms to compute photomask topologies. The chief goal of the research is to understand how efficient the neural net architectures such as U-net, Erf-Net and Deep Lab v.3, as well as built-in Calibre Workbench algorithms, can be in tackling inverse lithography problems. Specially generated and marked data sets are used to train the artificial neural nets. Calibre EDA software is used to generate haphazard patterns for a 90 nm transistor gate mask. The accuracy and speed parameters are used for the comparison. The edge placement error (EPE) and intersection over union (IOU) are used as metrics. The use of the neural nets allows two orders of magnitude reduction of the mask computation time, with accuracy keeping to 92% for the IOU metric.</p>\",\"PeriodicalId\":721,\"journal\":{\"name\":\"Optical Memory and Neural Networks\",\"volume\":\"32 4\",\"pages\":\"219 - 225\"},\"PeriodicalIF\":1.0000,\"publicationDate\":\"2023-12-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://link.springer.com/content/pdf/10.3103/S1060992X23040094.pdf\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Optical Memory and Neural Networks\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://link.springer.com/article/10.3103/S1060992X23040094\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"OPTICS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical Memory and Neural Networks","FirstCategoryId":"1085","ListUrlMain":"https://link.springer.com/article/10.3103/S1060992X23040094","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"OPTICS","Score":null,"Total":0}
Investigating the Efficiency of Using U-Net, Erf-Net and DeepLabV3 Architectures in Inverse Lithography-based 90-nm Photomask Generation
The paper deals with the inverse problem of computational lithography. We turn to deep neural network algorithms to compute photomask topologies. The chief goal of the research is to understand how efficient the neural net architectures such as U-net, Erf-Net and Deep Lab v.3, as well as built-in Calibre Workbench algorithms, can be in tackling inverse lithography problems. Specially generated and marked data sets are used to train the artificial neural nets. Calibre EDA software is used to generate haphazard patterns for a 90 nm transistor gate mask. The accuracy and speed parameters are used for the comparison. The edge placement error (EPE) and intersection over union (IOU) are used as metrics. The use of the neural nets allows two orders of magnitude reduction of the mask computation time, with accuracy keeping to 92% for the IOU metric.
期刊介绍:
The journal covers a wide range of issues in information optics such as optical memory, mechanisms for optical data recording and processing, photosensitive materials, optical, optoelectronic and holographic nanostructures, and many other related topics. Papers on memory systems using holographic and biological structures and concepts of brain operation are also included. The journal pays particular attention to research in the field of neural net systems that may lead to a new generation of computional technologies by endowing them with intelligence.