单层 H-ScAt2 中的本征谷极化和反常谷霍尔效应

Yingzhi Ye, Xiaolei Song, Zhanhui Yuan, Jun Wang, Bingwen Zhang
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引用次数: 0

摘要

由于具有自发极化特性的材料在信息编码和存储方面具有潜在的应用前景,因此在谷电子学领域大有可为。本文提出了一种稳定的二维铁磁谷材料 H-ScAt2,它能自发产生谷分裂并表现出本征反常霍尔效应。谷极化为 0.245 eV,比大多数报道的材料都大。我们的声子和分子动力学计算验证了其结构的稳定性。H-ScAt2 单层的居里温度约为 840 K,高于室温。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Intrinsic valley polarization and anomalous valley Hall effect in monolayer H-ScAt2

Intrinsic valley polarization and anomalous valley Hall effect in monolayer H-ScAt2

Materials with spontaneous polarization is very promising in valley electronics because of its potential application in encoding and storing information. In this paper, we proposed a stable two-dimensional ferromagnetic valley material H-ScAt2 which can spontaneously generate valley splitting and exhibit intrinsic anomalous Hall effect. The valley polarization is 0.245 eV, which is large than most of the reported materials. The structural stability is verified by our phonon and molecular dynamic calculation. The Curie temperature of H-ScAt2 monolayer is about 840 K, which is above room temperature.

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