Study on plastic deformation removal mechanism and dislocation change in nano‐grinding of single crystal silicon carbide with random rough surface

This investigation centers on exploring the plastic deformation removal mechanism and dislocation dynamics in the nano‐grinding of single crystal silicon carbide featuring a randomly rough surface. To simulate this, a novel approach combining the Weierstrass‐Mandelbrot fractal surface function with molecular dynamics is employed. Generate randomly rough surface contours using the Weierstrass‐Mandelbrot fractal surface function. By adjusting the fractal dimension, an ideal representation of single crystal silicon carbide with randomly rough surfaces is obtained. By combining plastic deformation detection methods, the process of workpiece sliding, plowing, and chip removal is thoroughly studied, and the plastic deformation removal mechanism of random rough surface grinding is explored; Combining post‐processing methods such as sheer strain and dislocation trajectory, analyze the morphological changes and transformation mechanisms of dislocations. Notably, at a grinding depth of 33.18nm, the activation of slip systems induces dislocation formation, enabling plastic deformation. Furthermore, at depths exceeding 144.00nm, the emergence of stacking faults on the random rough surface is observed. Throughout the grinding procedure, plastic deformation of debris occurs, leading to the formation of plastic bulges on both sides of the tool, the debris generated during processing does not significantly impact the defects encountered during secondary grinding of the rough surface.This article is protected by copyright. All rights reserved.