微型多波束 W 波段行波管慢波结构的开发与研究

IF 0.4 4区 计算机科学 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
R. A. Torgashov, D. A. Nozhkin, A. V. Starodubov, N. M. Ryskin
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引用次数: 0

摘要

摘要本文介绍了一种用于小型高功率w波段行波管(TWT)的金属支撑弯曲线慢波系统的研制结果。利用三维有限元软件包,研究了水泥浆系统的电磁参数。建立了一种带有防止自激器的两段行波管放大器模型。对波束相互作用进行了三维模拟。结果表明,在线性模式下,总波束电流为200 mA时,在95.4-97.75 GHz频段增益超过30 dB,饱和模式下输出功率达到120 W。提出了一种基于激光微加工的薄铜板SWSs制造技术。制备了SWS的测试样品,并用光学显微镜和扫描电镜对样品进行了验证。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Development and Investigation of a Slow-Wave Structure for a Miniature Multiple-Beam W-Band Traveling Wave Tube

Development and Investigation of a Slow-Wave Structure for a Miniature Multiple-Beam W-Band Traveling Wave Tube

Abstract

The results of the development of a meander-line slow-wave system (SWS) with metal supports for a miniature high-power W-band traveling-wave tube (TWT) with two sheet electron beams are presented. Using a three-dimensional finite element software package, the electromagnetic parameters of the SWS were studied. A two-section model of a TWT amplifier with a sever to prevent self-excitation has been developed. Three-dimensional modeling of the beam–wave interaction has been carried out. It was found that with a total beam current of 200 mA in the linear mode, the gain exceeds 30 dB in the frequency band 95.4–97.75 GHz, and the output power in the saturation mode reaches 120 W. A technology for manufacturing SWSs based on laser micromachining of thin copper plates is proposed. Test samples of the SWS were fabricated and verified using optical and scanning electron microscopy.

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来源期刊
CiteScore
1.00
自引率
20.00%
发文量
170
审稿时长
10.5 months
期刊介绍: Journal of Communications Technology and Electronics is a journal that publishes articles on a broad spectrum of theoretical, fundamental, and applied issues of radio engineering, communication, and electron physics. It publishes original articles from the leading scientific and research centers. The journal covers all essential branches of electromagnetics, wave propagation theory, signal processing, transmission lines, telecommunications, physics of semiconductors, and physical processes in electron devices, as well as applications in biology, medicine, microelectronics, nanoelectronics, electron and ion emission, etc.
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