M. S. Afanasyev, D. A. Belorusov, D. A. Kiselev, V. A. Luzanov, G. V. Chucheva
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Effect of Formation Conditions for Hafnium Oxide Films on Structural and Electrophysical Properties of Heterostructures
Abstract
Hafnium oxide (HfO2) films are synthesized on silicon substrates using magnetron sputtering under various technological conditions. The results on the structural composition of HfO2 films and the electrical properties of metal–insulator–semiconductor heterostructures (Ni– HfO2–Si) based on them are presented.
期刊介绍:
Journal of Communications Technology and Electronics is a journal that publishes articles on a broad spectrum of theoretical, fundamental, and applied issues of radio engineering, communication, and electron physics. It publishes original articles from the leading scientific and research centers. The journal covers all essential branches of electromagnetics, wave propagation theory, signal processing, transmission lines, telecommunications, physics of semiconductors, and physical processes in electron devices, as well as applications in biology, medicine, microelectronics, nanoelectronics, electron and ion emission, etc.