晶体取向对有限钛镍形状记忆合金板相变的影响

IF 0.4 4区计算机科学 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Communications Technology and Electronics Pub Date : 2023-12-13 DOI:10.1134/s1064226923100133

A. I. Pavlov, A. I. Kartsev, V. V. Koledov, P. V. Lega

{"title":"晶体取向对有限钛镍形状记忆合金板相变的影响","authors":"A. I. Pavlov, A. I. Kartsev, V. V. Koledov, P. V. Lega","doi":"10.1134/s1064226923100133","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>A TiNi shape memory alloy plate has been simulated at different crystallographic orientations in the free LAMMPS classical molecular dynamics simulator. It has been found that the crystallographic orientation of the plate significantly affects the phase transition temperature. The temperature dependence of the surface energy at the (100), (110), (112), and (122) crystallographic orientations has been built. The stability of the model used has been examined and thereby its applicability to the calculation made has been confirmed.</p>","PeriodicalId":50229,"journal":{"name":"Journal of Communications Technology and Electronics","volume":"84 1","pages":""},"PeriodicalIF":0.4000,"publicationDate":"2023-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of the Crystallographic Orientation on the Phase Transition in a Finite TiNi Shape Memory Alloy Plate\",\"authors\":\"A. I. Pavlov, A. I. Kartsev, V. V. Koledov, P. V. Lega\",\"doi\":\"10.1134/s1064226923100133\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<h3 data-test=\\\"abstract-sub-heading\\\">Abstract</h3><p>A TiNi shape memory alloy plate has been simulated at different crystallographic orientations in the free LAMMPS classical molecular dynamics simulator. It has been found that the crystallographic orientation of the plate significantly affects the phase transition temperature. The temperature dependence of the surface energy at the (100), (110), (112), and (122) crystallographic orientations has been built. The stability of the model used has been examined and thereby its applicability to the calculation made has been confirmed.</p>\",\"PeriodicalId\":50229,\"journal\":{\"name\":\"Journal of Communications Technology and Electronics\",\"volume\":\"84 1\",\"pages\":\"\"},\"PeriodicalIF\":0.4000,\"publicationDate\":\"2023-12-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Communications Technology and Electronics\",\"FirstCategoryId\":\"94\",\"ListUrlMain\":\"https://doi.org/10.1134/s1064226923100133\",\"RegionNum\":4,\"RegionCategory\":\"计算机科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Communications Technology and Electronics","FirstCategoryId":"94","ListUrlMain":"https://doi.org/10.1134/s1064226923100133","RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

摘要在自由LAMMPS经典分子动力学模拟器中模拟了不同晶体取向的TiNi形状记忆合金板。研究发现，晶体取向对相变温度有显著影响。建立了(100)、(110)、(112)和(122)晶体取向下表面能的温度依赖性。对所采用模型的稳定性进行了检验，从而证实了其对所作计算的适用性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Effect of the Crystallographic Orientation on the Phase Transition in a Finite TiNi Shape Memory Alloy Plate

查看原文本刊更多论文

Effect of the Crystallographic Orientation on the Phase Transition in a Finite TiNi Shape Memory Alloy Plate

Abstract

A TiNi shape memory alloy plate has been simulated at different crystallographic orientations in the free LAMMPS classical molecular dynamics simulator. It has been found that the crystallographic orientation of the plate significantly affects the phase transition temperature. The temperature dependence of the surface energy at the (100), (110), (112), and (122) crystallographic orientations has been built. The stability of the model used has been examined and thereby its applicability to the calculation made has been confirmed.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Journal of Communications Technology and Electronics 工程技术-电信学

CiteScore

1.00

自引率

20.00%

发文量

170

审稿时长

10.5 months

期刊介绍： Journal of Communications Technology and Electronics is a journal that publishes articles on a broad spectrum of theoretical, fundamental, and applied issues of radio engineering, communication, and electron physics. It publishes original articles from the leading scientific and research centers. The journal covers all essential branches of electromagnetics, wave propagation theory, signal processing, transmission lines, telecommunications, physics of semiconductors, and physical processes in electron devices, as well as applications in biology, medicine, microelectronics, nanoelectronics, electron and ion emission, etc.