利用计算机建模改进新型电子材料

Y.V. Bondaruk, T.S. Kavetskyy, A.O. Vinkovskaya, M. Kushniyazova, D.O. Dyachok, L.I. Pankiv, H.M. Klepach, O. Mushynska, O. Zubrytska, O.I. Matskiv, Y. Pavlovskyy, S.Y. Voloshanska, S. Monastyrska, L.V. Bodnar, A.E. Kiv
{"title":"利用计算机建模改进新型电子材料","authors":"Y.V. Bondaruk, T.S. Kavetskyy, A.O. Vinkovskaya, M. Kushniyazova, D.O. Dyachok, L.I. Pankiv, H.M. Klepach, O. Mushynska, O. Zubrytska, O.I. Matskiv, Y. Pavlovskyy, S.Y. Voloshanska, S. Monastyrska, L.V. Bodnar, A.E. Kiv","doi":"10.15407/spqeo26.04.470","DOIUrl":null,"url":null,"abstract":"Porous materials occupy an important place among the materials of electronic equipment. Nanopores, which are obtained by ion irradiation of materials, have a complex internal structure that depends on the interaction of fast ions with the substance. Obtaining such structures is important, in particular, in the manufacture of biosensor devices based on them. The most effective methods of studying their properties are computer simulations. However, effective computer models of track structures, necessary for the development and improvement of modern biosensors, are not being created actively enough. The approach proposed here involves a detailed study of the interaction of ion flows with the inner surface of the nanotrack. This approach takes into account the structural features of the inner surface of the track as well as the role of adsorption and scattering centers and other local centers. In the existing approaches, the processes mentioned above are mainly described phenomenologically, which does not indicate the ways of modifying the characteristics of the material that is necessary for the device improvement.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"92 20","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2023-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Improvement of new electronic materials using computer modeling\",\"authors\":\"Y.V. Bondaruk, T.S. Kavetskyy, A.O. Vinkovskaya, M. Kushniyazova, D.O. Dyachok, L.I. Pankiv, H.M. Klepach, O. Mushynska, O. Zubrytska, O.I. Matskiv, Y. Pavlovskyy, S.Y. Voloshanska, S. Monastyrska, L.V. Bodnar, A.E. Kiv\",\"doi\":\"10.15407/spqeo26.04.470\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Porous materials occupy an important place among the materials of electronic equipment. Nanopores, which are obtained by ion irradiation of materials, have a complex internal structure that depends on the interaction of fast ions with the substance. Obtaining such structures is important, in particular, in the manufacture of biosensor devices based on them. The most effective methods of studying their properties are computer simulations. However, effective computer models of track structures, necessary for the development and improvement of modern biosensors, are not being created actively enough. The approach proposed here involves a detailed study of the interaction of ion flows with the inner surface of the nanotrack. This approach takes into account the structural features of the inner surface of the track as well as the role of adsorption and scattering centers and other local centers. In the existing approaches, the processes mentioned above are mainly described phenomenologically, which does not indicate the ways of modifying the characteristics of the material that is necessary for the device improvement.\",\"PeriodicalId\":21598,\"journal\":{\"name\":\"Semiconductor physics, quantum electronics and optoelectronics\",\"volume\":\"92 20\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-12-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Semiconductor physics, quantum electronics and optoelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.15407/spqeo26.04.470\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductor physics, quantum electronics and optoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.15407/spqeo26.04.470","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

多孔材料在电子设备材料中占有重要地位。纳米孔是通过离子辐照获得的材料,具有复杂的内部结构,这取决于快离子与物质的相互作用。获得这样的结构是很重要的,特别是在基于它们的生物传感器设备的制造中。研究其性质最有效的方法是计算机模拟。然而,对于现代生物传感器的发展和改进来说,有效的轨道结构计算机模型还没有被积极地创造出来。本文提出的方法包括对离子流与纳米轨道内表面相互作用的详细研究。这种方法考虑了轨道内表面的结构特征以及吸附和散射中心以及其他局部中心的作用。在现有的方法中,上述过程主要是现象学上的描述,这并没有指出修改设备改进所必需的材料特性的方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Improvement of new electronic materials using computer modeling
Porous materials occupy an important place among the materials of electronic equipment. Nanopores, which are obtained by ion irradiation of materials, have a complex internal structure that depends on the interaction of fast ions with the substance. Obtaining such structures is important, in particular, in the manufacture of biosensor devices based on them. The most effective methods of studying their properties are computer simulations. However, effective computer models of track structures, necessary for the development and improvement of modern biosensors, are not being created actively enough. The approach proposed here involves a detailed study of the interaction of ion flows with the inner surface of the nanotrack. This approach takes into account the structural features of the inner surface of the track as well as the role of adsorption and scattering centers and other local centers. In the existing approaches, the processes mentioned above are mainly described phenomenologically, which does not indicate the ways of modifying the characteristics of the material that is necessary for the device improvement.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信