硫化对 CdS 纳米晶体光学特性的影响

A.B. Bogoslovska, D. Grynko, E.G. Bortchagovsky
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引用次数: 0

摘要

研究了气液固相生长法制备的硫化镉一维纳米晶体的光学性质与合成过程中硫蒸气超压或在硫气氛中附加退火(硫化)等工艺参数的关系。紫外可见吸收光谱和光致发光光谱分析表明,CdS纳米晶体的光学参数与合成过程中硫的补偿程度有很大的关系。在超压硫蒸汽处理下,通过改变缺陷能级和近带边发射强度的比值来表征光致发光光谱。在硫蒸气中生长或生长后处理后,缺陷能级发射强度显著降低。利用Tauc关系计算的光吸收边表明晶体结构得到了改善,这体现在不同工艺方法固化时的光学带隙值不断上升,接近于块状材料在硫化时的带隙值。通过吸收和发光测量得到的光学性质完全相关,符合应用技术。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Influence of sulfurization on optical properties of CdS nanocrystals
Optical properties of 1D nanocrystals of cadmium sulfide synthesized by vapor– liquid–solid growing were investigated as the function from such technological parameter as overpressure of sulfur vapor at the synthesis process or post-processing by the additional annealing in the sulfur atmosphere (sulfurization). The analyses of UV-vis absorption and photoluminescence spectra indicate considerable dependences of CdS nanocrystals optical parameters from sulfur compensation degree at the synthesis process. The photo- luminescence spectra are characterized by changing the ratio of intensities of the defect level and near band edge emissions at overpressure sulfur vapor treatment. A significant decrease in the intensity of defect level emission after the growth or post-growth treatment in sulfur vapor has been observed. Optical absorption edge calculated using the Tauc relation demonstrates improvement of the crystal structure, which is reflected by the rising optical band gap value that approaches to the value for the bulk material at curing of sulfur vacancies by different technological ways. Optical properties obtained by absorption and luminescent measurements demonstrate total correlation, which corresponds to applied technology.
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