用于宽带红外探测成像的界面钝化PtSe2/Ge肖特基结阵列的原位构建

IF 22.7 1区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY
Infomat Pub Date : 2023-11-21 DOI:10.1002/inf2.12499
Xue Li, Shuo-En Wu, Di Wu, Tianxiang Zhao, Pei Lin, Zhifeng Shi, Yongtao Tian, Xinjian Li, Longhui Zeng, Xuechao Yu
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引用次数: 0

摘要

红外(IR)探测在各种军事和民用应用中至关重要。最近的研究强调了二维(2D)拓扑半金属在红外探测中的潜力,因为它们具有独特的优势,包括范德华(vdW)堆叠,无间隙电子结构和状态电子密度的范霍夫奇点。然而,基于二维拓扑半金属的光电探测器的大规模图像化、光响应性差和大暗电流等挑战严重阻碍了它们在低能光子传感中的广泛应用。在这里,我们演示了通过将具有垂直层结构的二维PtSe2薄膜直接沉积在具有超薄AlOx层的Ge衬底上来原位制造PtSe2/Ge肖特基结。由于高质量的结,光电探测器具有高达4.6 μm的宽带响应,以及高达1012琼斯的高比探测率,并且在环境条件下也具有出色的稳定性。此外,基于PtSe2/AlOx/Ge Schottky结的高度集成器件阵列在室温下展示了出色的中红外(MIR)成像能力。这些发现突出了二维拓扑半金属在非冷却红外光探测和成像应用中的前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

In situ construction of PtSe2/Ge Schottky junction array with interface passivation for broadband infrared photodetection and imaging

In situ construction of PtSe2/Ge Schottky junction array with interface passivation for broadband infrared photodetection and imaging

In situ construction of PtSe2/Ge Schottky junction array with interface passivation for broadband infrared photodetection and imaging

Infrared (IR) detection is vital for various military and civilian applications. Recent research has highlighted the potential of two-dimensional (2D) topological semimetals in IR detection due to their distinctive advantages, including van der Waals (vdW) stacking, gapless electronic structure, and Van Hove singularities in the electronic density of states. However, challenges such as large-scale patterning, poor photoresponsivity, and high dark current of photodetectors based on 2D topological semimetals significantly impede their wider applications in low-energy photon sensing. Here, we demonstrate the in situ fabrication of PtSe2/Ge Schottky junction by directly depositing 2D PtSe2 films with a vertical layer structure on a Ge substrate with an ultrathin AlOx layer. Due to high quality junction, the photodetector features a broadband response of up to 4.6 μm, along with a high specific detectivity of ~1012 Jones, and operates with remarkable stability in ambient conditions as well. Moreover, the highly integrated device arrays based on PtSe2/AlOx/Ge Schottky junction showcases excellent Mid-IR (MIR) imaging capability at room temperature. These findings highlight the promising prospects of 2D topological semimetals for uncooled IR photodetection and imaging applications.

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来源期刊
Infomat
Infomat MATERIALS SCIENCE, MULTIDISCIPLINARY-
CiteScore
37.70
自引率
3.10%
发文量
111
审稿时长
8 weeks
期刊介绍: InfoMat, an interdisciplinary and open-access journal, caters to the growing scientific interest in novel materials with unique electrical, optical, and magnetic properties, focusing on their applications in the rapid advancement of information technology. The journal serves as a high-quality platform for researchers across diverse scientific areas to share their findings, critical opinions, and foster collaboration between the materials science and information technology communities.
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