{"title":"周期变化啁啾AlxInyGa(1-x-y)N/ Al0.70Ga0.30N超晶格电子阻挡区对近无下垂UV-C led的影响","authors":"Indrani Mazumder, Kashish Sapra, Ashok Chauhan, Manish Mathew, Kuldip Singh","doi":"10.1016/j.mseb.2023.117048","DOIUrl":null,"url":null,"abstract":"<p><span>A SLs quaternary nitride<span> alloy-based UV-C LED with a uniquely designed electron blocking region is proposed in this article. At 200 A/cm</span></span><sup>2</sup> current density, the proposed design has maximum IQE, ∼121% better than the reference design. Additionally, less than 1% efficiency droop is observed in the proposed design. Due to strain compensation offered by the periodically varying and chirped SLs Al<sub>a</sub>In<sub>b</sub>Ga<sub>(1-a-b)</sub>N/ Al<sub>c</sub>In<sub>d</sub>Ga<sub>(1-c-d)</sub>N/ Al<sub>e</sub>In<sub>f</sub>Ga<sub>(1-e-f)</sub>N/ Al<sub>g</sub>In<sub>h</sub>Ga<sub>(1-g-h)</sub>N/ Al<sub>i</sub>In<sub>j</sub>Ga<sub>(1-i-j)</sub>N/ Al<sub>0.70</sub>Ga<sub>0.30</sub>N electron blocking region, there is no abrupt potential barrier present, which makes it possible for hole injection in the active region to increase and hence improve the LED performance. The substantial improvement in the IQE is attributable to the proposed structure's enhancement in the carrier wave function overlap by 30%.</p>","PeriodicalId":501486,"journal":{"name":"Materials Science and Engineering: B","volume":"2 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2023-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of periodically varying chirped AlxInyGa(1-x-y)N/ Al0.70Ga0.30N Super-Lattice based electron blocking region for nearly droop free UV-C LEDs\",\"authors\":\"Indrani Mazumder, Kashish Sapra, Ashok Chauhan, Manish Mathew, Kuldip Singh\",\"doi\":\"10.1016/j.mseb.2023.117048\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><span>A SLs quaternary nitride<span> alloy-based UV-C LED with a uniquely designed electron blocking region is proposed in this article. At 200 A/cm</span></span><sup>2</sup> current density, the proposed design has maximum IQE, ∼121% better than the reference design. Additionally, less than 1% efficiency droop is observed in the proposed design. Due to strain compensation offered by the periodically varying and chirped SLs Al<sub>a</sub>In<sub>b</sub>Ga<sub>(1-a-b)</sub>N/ Al<sub>c</sub>In<sub>d</sub>Ga<sub>(1-c-d)</sub>N/ Al<sub>e</sub>In<sub>f</sub>Ga<sub>(1-e-f)</sub>N/ Al<sub>g</sub>In<sub>h</sub>Ga<sub>(1-g-h)</sub>N/ Al<sub>i</sub>In<sub>j</sub>Ga<sub>(1-i-j)</sub>N/ Al<sub>0.70</sub>Ga<sub>0.30</sub>N electron blocking region, there is no abrupt potential barrier present, which makes it possible for hole injection in the active region to increase and hence improve the LED performance. The substantial improvement in the IQE is attributable to the proposed structure's enhancement in the carrier wave function overlap by 30%.</p>\",\"PeriodicalId\":501486,\"journal\":{\"name\":\"Materials Science and Engineering: B\",\"volume\":\"2 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-11-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Science and Engineering: B\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1016/j.mseb.2023.117048\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science and Engineering: B","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1016/j.mseb.2023.117048","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of periodically varying chirped AlxInyGa(1-x-y)N/ Al0.70Ga0.30N Super-Lattice based electron blocking region for nearly droop free UV-C LEDs
A SLs quaternary nitride alloy-based UV-C LED with a uniquely designed electron blocking region is proposed in this article. At 200 A/cm2 current density, the proposed design has maximum IQE, ∼121% better than the reference design. Additionally, less than 1% efficiency droop is observed in the proposed design. Due to strain compensation offered by the periodically varying and chirped SLs AlaInbGa(1-a-b)N/ AlcIndGa(1-c-d)N/ AleInfGa(1-e-f)N/ AlgInhGa(1-g-h)N/ AliInjGa(1-i-j)N/ Al0.70Ga0.30N electron blocking region, there is no abrupt potential barrier present, which makes it possible for hole injection in the active region to increase and hence improve the LED performance. The substantial improvement in the IQE is attributable to the proposed structure's enhancement in the carrier wave function overlap by 30%.
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