用半导体结构观察到横向分辨率为10 ~ 15nm的无孔径扫描近场光学显微镜探针

IF 0.7 4区物理与天体物理 Q4 OPTICS

Journal of Russian Laser Research Pub Date : 2023-11-24 DOI:10.1007/s10946-023-10174-2

D. V. Kazantsev, A. V. Klekovkin, I. I. Minaev, E. A. Kazantseva, S. N. Nikolaev

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引用次数: 0

摘要

利用InSb/GaSb半导体量子点，在波长为λ = 10.7 μm的单模CO2激光下，获得了10 ~ 15 nm的无孔散射近场显微镜横向空间分辨率。测量条件无疑可以排除由样品地形和其他类似因素引起的任何人为因素。我们利用量子点的InSb/GaSb界面上的二维电子气体识别出强局域平面内近场信号。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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An Apertureless Scanning Near-Field Optical Microscope Probe with a Lateral Resolution of 10 – 15 nm Observed with a Semiconductor Structure

Using InSb/GaSb semiconductor quantum dots, we demonstrate the lateral spatial resolution of scattering apertureless near-field microscope equal to 10 – 15 nm at a wavelength of λ = 10.7 μm provided by a single-mode CO₂ laser. The measurement conditions make it possible to undoubtedly exclude any artifacts caused by the sample topography and other similar factors. We identify the strongly localized in-plane near-field signal with a two-dimensional electron gas clamped on the InSb/GaSb interface of quantum dots.

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来源期刊

Journal of Russian Laser Research 物理-光学

CiteScore

1.50

自引率

22.20%

发文量

审稿时长

2 months

期刊介绍： The journal publishes original, high-quality articles that follow new developments in all areas of laser research, including: laser physics; laser interaction with matter; properties of laser beams; laser thermonuclear fusion; laser chemistry; quantum and nonlinear optics; optoelectronics; solid state, gas, liquid, chemical, and semiconductor lasers.