A. A. Kharchenko, D. I. Brinkevich, S. D. Brinkevich, V. S. Prosolovich
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Radiation-Induced Alteration of the Reflection Spectra of Diazoquinone–Novolac Photoresist Films by Implantation of Ag+ Ions
Abstract
FP9120 diazoquinone–novolac positive photoresist films 1.5 µm thick implanted with Ag+ ions and supported on the surface of KDB-10 (111) silicon wafers by centrifugation have been studied by measuring reflection spectra. It has been shown that ion implantation leads to a decrease in the refractive index of the photoresist due to radiation crosslinking of novolac resin molecules and a decrease in the density ρ and the molecular refraction RM of the photoresist. It has been established that the reflection coefficient in the opaque region of the photoresistive film increases with the Ag+ implantation dose. The changes observed in the optical properties of the films under ion implantation conditions are explained taking into account radiation-chemical processes in the phenol–formaldehyde photoresist.
期刊介绍：
High Energy Chemistry publishes original articles, reviews, and short communications on molecular and supramolecular photochemistry, photobiology, radiation chemistry, plasma chemistry, chemistry of nanosized systems, chemistry of new atoms, processes and materials for optical information systems and other areas of high energy chemistry. It publishes theoretical and experimental studies in all areas of high energy chemistry, such as the interaction of high-energy particles with matter, the nature and reactivity of short-lived species induced by the action of particle and electromagnetic radiation or hot atoms on substances in their gaseous and condensed states, and chemical processes initiated in organic and inorganic systems by high-energy radiation.
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