金属纳米颗粒与石墨烯器件的衬底选择性粘附

Patrick J. Edwards, Sean Stuart, James T. Farmer, Ran Shi, Run Long, Oleg V. Prezhdo, Vitaly V. Kresin
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引用次数: 0

摘要

纳米结构的电子器件,比如基于石墨烯的器件,通常生长在绝缘体SiO2上。它们暴露在小尺寸选定的银纳米颗粒的通量下,显示出显著的选择性粘附:石墨烯通道可以完全金属化,而绝缘衬底保持无覆盖。这种明显的对比源于金属纳米颗粒和无污染钝化二氧化硅表面之间的低结合能。除了提供对颗粒粘附的物理洞察之外,这种效应在涉及器件工作表面金属层沉积的应用中可能具有价值:它消除了屏蔽绝缘区域以及相关的广泛且潜在有害的预处理和后处理的需要。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Substrate-Selective Adhesion of Metal Nanoparticles to Graphene Devices
Nanostructured electronic devices, such as those based on graphene, are typically grown on top of the insulator SiO2. Their exposure to a flux of small size-selected silver nanoparticles has revealed remarkably selective adhesion: the graphene channel can be made fully metallized while the insulating substrate remains coverage-free. This conspicuous contrast derives from the low binding energy between the metal nanoparticles and a contaminant-free passivated silica surface. In addition to providing physical insight into nanoparticle adhesion, this effect may be of value in applications involving deposition of metallic layers on device working surfaces: it eliminates the need for masking the insulating region and the associated extensive and potentially deleterious pre- and postprocessing.
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