基于MBE n-HgCdTe NBνN势垒结构的MIS结构特性的导纳光谱研究

IF 0.4 4区 计算机科学 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
A. V. Voitsekhovskii, S. M. Dzyadukh, D. I. Gorn, S. A. Dvoretskii, N. N. Mikhailov, G. Yu. Sidorov, M. V. Yakushev
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引用次数: 0

摘要

摘要本研究主要研究n-HgCdTe (MCT)在nν n结构下的分子束外延生长的金属-绝缘体-半导体(MIS)结构,旨在开发在MWIR和LWIR光谱范围内具有较低暗电流的红外(IR)探测器。用导纳光谱法研究了7种MIS结构。结果表明,测量MIS器件阻抗的频率依赖性可以准确地确定势垒结构的差分电阻。研究结果表明,其中一种结构的差分电阻值由暗电流的体积分量决定,而表面漏电分量对测量阻抗没有显著影响。结果表明,如果解决了平台结构的钝化问题,就有可能基于高阈值参数的MBE HgCdTe制备高效的MWIR和LWIR nBn, NBνN探测器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Investigation of Characteristics of MIS Structures Based on MBE n-HgCdTe NBνN Barrier Structures by Admittance Spectroscopy

Investigation of Characteristics of MIS Structures Based on MBE n-HgCdTe NBνN Barrier Structures by Admittance Spectroscopy

Abstract

This study is devoted to the study of metal–insulator–semiconductor (MIS) structures based on n-HgCdTe (MCT) grown by molecular beam epitaxy (MBE) in the NBνN configuration, intended for the development of infrared (IR) detectors with reduced dark currents for MWIR and LWIR spectral ranges. Seven types of MIS structures have been studied by the admittance spectroscopy method. It is shown that the measurements of the frequency dependences of the impedance of MIS devices make it possible to accurately determine the differential resistance of the barrier structure. It has been established that for one of the studied structures, the values of the differential resistance are determined by the bulk component of the dark current, while the surface leakage component does not significantly affect the measured impedance. It is shown that if the problem of passivation of mesa structures is solved, it is possible to fabricate efficient MWIR and LWIR nBn, NBνN detectors based on MBE HgCdTe with high threshold parameters.

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来源期刊
CiteScore
1.00
自引率
20.00%
发文量
170
审稿时长
10.5 months
期刊介绍: Journal of Communications Technology and Electronics is a journal that publishes articles on a broad spectrum of theoretical, fundamental, and applied issues of radio engineering, communication, and electron physics. It publishes original articles from the leading scientific and research centers. The journal covers all essential branches of electromagnetics, wave propagation theory, signal processing, transmission lines, telecommunications, physics of semiconductors, and physical processes in electron devices, as well as applications in biology, medicine, microelectronics, nanoelectronics, electron and ion emission, etc.
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