Liying Wang, Jiansheng Wang, Xueling Liu, Xinli Lu
{"title":"晶格取向和缺陷程度对Si/Al固体界面结构和热阻的影响","authors":"Liying Wang, Jiansheng Wang, Xueling Liu, Xinli Lu","doi":"10.1080/08927022.2023.2281982","DOIUrl":null,"url":null,"abstract":"The effect of variation in the Si/Al interface structure on the thermal properties is explored with non-equilibrium molecular dynamics method in present work, and two distinct approaches are employ...","PeriodicalId":18863,"journal":{"name":"Molecular Simulation","volume":null,"pages":null},"PeriodicalIF":1.9000,"publicationDate":"2023-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effects of lattice orientation and defect degree on Si/Al solid interfacial structure and thermal resistance\",\"authors\":\"Liying Wang, Jiansheng Wang, Xueling Liu, Xinli Lu\",\"doi\":\"10.1080/08927022.2023.2281982\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The effect of variation in the Si/Al interface structure on the thermal properties is explored with non-equilibrium molecular dynamics method in present work, and two distinct approaches are employ...\",\"PeriodicalId\":18863,\"journal\":{\"name\":\"Molecular Simulation\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.9000,\"publicationDate\":\"2023-11-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Molecular Simulation\",\"FirstCategoryId\":\"92\",\"ListUrlMain\":\"https://doi.org/10.1080/08927022.2023.2281982\",\"RegionNum\":4,\"RegionCategory\":\"化学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Molecular Simulation","FirstCategoryId":"92","ListUrlMain":"https://doi.org/10.1080/08927022.2023.2281982","RegionNum":4,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
Effects of lattice orientation and defect degree on Si/Al solid interfacial structure and thermal resistance
The effect of variation in the Si/Al interface structure on the thermal properties is explored with non-equilibrium molecular dynamics method in present work, and two distinct approaches are employ...
期刊介绍:
Molecular Simulation covers all aspects of research related to, or of importance to, molecular modelling and simulation.
Molecular Simulation brings together the most significant papers concerned with applications of simulation methods, and original contributions to the development of simulation methodology from biology, biochemistry, chemistry, engineering, materials science, medicine and physics.
The aim is to provide a forum in which cross fertilization between application areas, methodologies, disciplines, as well as academic and industrial researchers can take place and new developments can be encouraged.
Molecular Simulation is of interest to all researchers using or developing simulation methods based on statistical mechanics/quantum mechanics. This includes molecular dynamics (MD, AIMD), Monte Carlo, ab initio methods related to simulation, multiscale and coarse graining methods.