{"title":"辐射对高效硅太阳能电池的影响","authors":"W. Luft","doi":"10.1016/0013-7480(77)90023-7","DOIUrl":null,"url":null,"abstract":"<div><p>The performance of 10 cell types from 3 manufacturers shows non-irradiated, glass-covered cell efficiencies ranging from 10.3 to 13.6% after prolonged photon illumination for cells having thicknesses from 215 to 370 μm.</p><p>Efficiencies after irradiation by 1-MeV electrons to a fluence of 10<sup>15</sup> e/cm<sup>2</sup> ranged from 8.0 to 9.2%. The degradation in power output as a result of 10<sup>15</sup> e/cm<sup>2</sup> irradiation ranged from 31 to 32% for cells with a 2 ohm-cm base resistivity and from 28 to 30% for 10 ohm-cm cells. Cells having a P<sup>+</sup> back surface field showed the highest degradation in each resistivity group.</p><p>Only a cell group using float-zone material showed significant photon degradation after electron irradiation. All other cell types showed annealing of electron irradiation damage of up to 5% after 3 × 10<sup>15</sup> e/cm<sup>2</sup> irradiation.</p><p>The solar absorptance for the high efficiency cells ranges from 0.78 to 0.93.</p></div>","PeriodicalId":100466,"journal":{"name":"Energy Conversion","volume":"16 4","pages":"Pages 159-167"},"PeriodicalIF":0.0000,"publicationDate":"1977-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0013-7480(77)90023-7","citationCount":"0","resultStr":"{\"title\":\"Radiation effects on high efficiency silicon solar cells\",\"authors\":\"W. Luft\",\"doi\":\"10.1016/0013-7480(77)90023-7\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The performance of 10 cell types from 3 manufacturers shows non-irradiated, glass-covered cell efficiencies ranging from 10.3 to 13.6% after prolonged photon illumination for cells having thicknesses from 215 to 370 μm.</p><p>Efficiencies after irradiation by 1-MeV electrons to a fluence of 10<sup>15</sup> e/cm<sup>2</sup> ranged from 8.0 to 9.2%. The degradation in power output as a result of 10<sup>15</sup> e/cm<sup>2</sup> irradiation ranged from 31 to 32% for cells with a 2 ohm-cm base resistivity and from 28 to 30% for 10 ohm-cm cells. Cells having a P<sup>+</sup> back surface field showed the highest degradation in each resistivity group.</p><p>Only a cell group using float-zone material showed significant photon degradation after electron irradiation. All other cell types showed annealing of electron irradiation damage of up to 5% after 3 × 10<sup>15</sup> e/cm<sup>2</sup> irradiation.</p><p>The solar absorptance for the high efficiency cells ranges from 0.78 to 0.93.</p></div>\",\"PeriodicalId\":100466,\"journal\":{\"name\":\"Energy Conversion\",\"volume\":\"16 4\",\"pages\":\"Pages 159-167\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1977-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/0013-7480(77)90023-7\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Energy Conversion\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/0013748077900237\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Energy Conversion","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/0013748077900237","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Radiation effects on high efficiency silicon solar cells
The performance of 10 cell types from 3 manufacturers shows non-irradiated, glass-covered cell efficiencies ranging from 10.3 to 13.6% after prolonged photon illumination for cells having thicknesses from 215 to 370 μm.
Efficiencies after irradiation by 1-MeV electrons to a fluence of 1015 e/cm2 ranged from 8.0 to 9.2%. The degradation in power output as a result of 1015 e/cm2 irradiation ranged from 31 to 32% for cells with a 2 ohm-cm base resistivity and from 28 to 30% for 10 ohm-cm cells. Cells having a P+ back surface field showed the highest degradation in each resistivity group.
Only a cell group using float-zone material showed significant photon degradation after electron irradiation. All other cell types showed annealing of electron irradiation damage of up to 5% after 3 × 1015 e/cm2 irradiation.
The solar absorptance for the high efficiency cells ranges from 0.78 to 0.93.
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