用物理-x程序在康普顿能量范围内计算x射线/伽马射线与硼酸锌铋玻璃的相互作用

IF 0.7 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

Integrated Ferroelectrics Pub Date : 2023-10-27 DOI:10.1080/10584587.2023.2234611

W. Chaiphaksa, P. Borisut, J. Kaewkhao, N. W. Sangwaranatee

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Mathematical Calculation of X-Rays/Gamma-Rays Interaction with Zinc Bismuth Borate Glass Using Phy-x Program in Compton Energy Range

Abstract The zinc bismuth borate (ZBB)glasses have been calculated using Phy-X program at the Compton energy range. The ZBB glasses were decided in the concentration of Bi2O3 = 25, 30, 35 and 40 mol%. The mass attenuation coefficient, the effective atomic number, the effective electron density, the half value layer and the lead equivalent thickness were investigated. The results show the trend of values were decrease when the Compton energy increasing and found the values were higher when the concentration of Bi2O3 increases. The Zeff and Neff show similar trend showing that the values decrease with decrease in Bi2O3 content. The HVL value shows lowest with an increase in concentration of Bi2O3 suggesting their role to be good candidature for radiation shielding material applications. The lead equivalent thickness of glass samples shows a good trend when adding more concentration of Bi2O3 and found the highest value at 40 mol% of Bi2O3 concentration.

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来源期刊

Integrated Ferroelectrics 工程技术-工程：电子与电气

CiteScore

1.40

自引率

0.00%

发文量

179

审稿时长

3 months

期刊介绍： Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices. Such devices unite ferroelectric films and semiconductor integrated circuit chips. The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.