具有自旋轨道耦合的abca -四层石墨烯中陈氏绝缘子的观察

Sha, Yating, Zheng, Jian, Liu, Kai, Du, Hong, Watanabe, Kenji, Taniguchi, Takashi, Jia, Jinfeng, Shi, Zhiwen, Zhong, Ruidan, Chen, Guorui
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引用次数: 0

摘要

多层石墨烯中的简并,包括自旋、谷和层自由度,容易受到库仑相互作用的影响,并可能导致丰富的破对称状态。在这项工作中,我们报告了由邻近WSe2引起的自旋轨道耦合驱动的电荷中性abca四层石墨烯中的铁磁态。进一步确定铁磁态为陈恩数为4的陈恩绝缘子,在零和0.4特斯拉时,其霍尔电阻分别达到h/4e2量化的78%和100%。垂直位移场可以连续调节破对称绝缘体、层-反铁磁体、陈氏绝缘体和层-极化绝缘体三种绝缘状态及其跃迁。值得注意的是,陈氏绝缘子的磁顺序可以通过三个旋钮来切换,包括磁场、电掺杂和垂直位移场。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Observation of Chern insulator in crystalline ABCA-tetralayer graphene with spin-orbit coupling
Degeneracies in multilayer graphene, including spin, valley, and layer degrees of freedom, are susceptible to Coulomb interactions and can result into rich broken-symmetry states. In this work, we report a ferromagnetic state in charge neutral ABCA-tetralayer graphene driven by proximity-induced spin-orbit coupling from adjacent WSe2. The ferromagnetic state is further identified as a Chern insulator with Chern number of 4, and its Hall resistance reaches 78% and 100% quantization of h/4e2 at zero and 0.4 tesla, respectively. Three broken-symmetry insulating states, layer-antiferromagnet, Chern insulator and layer-polarized insulator and their transitions can be continuously tuned by the vertical displacement field. Remarkably, the magnetic order of the Chern insulator can be switched by three knobs, including magnetic field, electrical doping, and vertical displacement field.
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