角分辨光谱学研究准一维卤化铋的拓扑电子结构

Ryo NOGUCHI
{"title":"角分辨光谱学研究准一维卤化铋的拓扑电子结构","authors":"Ryo NOGUCHI","doi":"10.1380/vss.66.574","DOIUrl":null,"url":null,"abstract":"Quasi-one-dimensional materials offer an ideal playground to investigate weak topological insulators (WTIs) and higher-order topological insulators (HOTIs), since their characteristic boundary states emerge in the naturally cleaved surfaces. Utilizing laser-based angle-resolved photoemission spectroscopy (ARPES) and synchrotron-based nano-ARPES, we show evidence of a WTI phase in β-Bi4I4 and a HOTI phase in Bi4Br4.","PeriodicalId":470115,"journal":{"name":"Hyomen to shinku","volume":"58 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Topological Electronic Structures of Quasi-one-dimensional Bismuth Halides Investigated by Angle-resolved Photoemission Spectroscopy\",\"authors\":\"Ryo NOGUCHI\",\"doi\":\"10.1380/vss.66.574\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Quasi-one-dimensional materials offer an ideal playground to investigate weak topological insulators (WTIs) and higher-order topological insulators (HOTIs), since their characteristic boundary states emerge in the naturally cleaved surfaces. Utilizing laser-based angle-resolved photoemission spectroscopy (ARPES) and synchrotron-based nano-ARPES, we show evidence of a WTI phase in β-Bi4I4 and a HOTI phase in Bi4Br4.\",\"PeriodicalId\":470115,\"journal\":{\"name\":\"Hyomen to shinku\",\"volume\":\"58 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-10-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Hyomen to shinku\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1380/vss.66.574\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Hyomen to shinku","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1380/vss.66.574","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

准一维材料为研究弱拓扑绝缘子(wti)和高阶拓扑绝缘子(HOTIs)提供了理想的平台,因为它们的特征边界态出现在自然劈裂表面。利用基于激光的角分辨光发射光谱(ARPES)和基于同步加速器的纳米ARPES,我们发现β-Bi4I4中存在WTI相和Bi4Br4中存在HOTI相。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Topological Electronic Structures of Quasi-one-dimensional Bismuth Halides Investigated by Angle-resolved Photoemission Spectroscopy
Quasi-one-dimensional materials offer an ideal playground to investigate weak topological insulators (WTIs) and higher-order topological insulators (HOTIs), since their characteristic boundary states emerge in the naturally cleaved surfaces. Utilizing laser-based angle-resolved photoemission spectroscopy (ARPES) and synchrotron-based nano-ARPES, we show evidence of a WTI phase in β-Bi4I4 and a HOTI phase in Bi4Br4.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信