氧化钆和氟化钆对掺t2o3硼磷酸盐玻璃的影响

IF 0.7 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

Integrated Ferroelectrics Pub Date : 2023-10-27 DOI:10.1080/10584587.2023.2234601

F. Khrongchaiyaphum, N. Wantana, P. Kanthang, J. Tharajak, T. Sareein, J. Kaewkhao

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引用次数: 0

摘要

摘要采用熔淬法在掺有铽离子(Tb3+)的硼磷酸盐玻璃中合成氧化钆和氟化物。研究了氟化物的作用及其对物理、光学和发光性能的影响。这种玻璃吸收近红外线、可见光和紫外线光子。Tb3+的5D4→7F5辐射态在542 nm左右发出亮绿色辐射。根据激发的不同，有几种紫外线、可见光和x射线。衰减时间的值以毫秒(ms)为单位。在275 nm激发下，Gd3+-Tb3+的能量转移对绿色发射至关重要。根据研究结果，所研制的玻璃可以作为绿色发射介质的合适候选者。关键词:硼磷酸盐玻璃stb3 +能量转移稀土Kaewkhao感谢泰国国家研究委员会(NRCT)和泰国科学研究与创新(TSRI)对这项研究的支持。作者要感谢玻璃技术和材料科学卓越中心研究实验室的所有研究生和合作研究人员，以及Rajamangala理工大学Phra Nakhon理工学院工业材料科学部。披露声明作者未报告潜在的利益冲突。本研究由泰国研究基金(TRF)通过皇家金禧(RGJ)博士项目(批准号:N41A650114)。

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Effect of Gadolinium Oxide and Gadolinium Fluoride in Borophosphate Glasses Doped with Tb ₂ O ₃ Content

Abstract The melt-quenching process synthesized gadolinium oxide and fluoride in borophosphate glasses doped with terbium ions (Tb3+). The effect of fluoride compounds and their impacts on physical, optical, and luminescent properties have been investigated. The glasses absorbed near-infrared, visible light, and ultraviolet photons. The bright green emission circa 542 nm via the 5D4 → 7F5 radiative state of Tb3+ originated. Depending on the excitation, there are several sorts of ultraviolet, visible light, and X-ray. The values of decay time are in the order of milliseconds (ms). The Gd3+-Tb3+ energy transfer is vital in green emission under 275 nm excitation. According to the results obtained in this work, the developed glasses can be suitable candidates for green emission medium.

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来源期刊

Integrated Ferroelectrics 工程技术-工程：电子与电气

CiteScore

1.40

自引率

0.00%

发文量

179

审稿时长

3 months

期刊介绍： Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices. Such devices unite ferroelectric films and semiconductor integrated circuit chips. The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.