sm2o3浓度对na2o: al2o3: g2o_3: p2o5玻璃体系物理、光学和发光性能的影响

IF 0.7 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

Integrated Ferroelectrics Pub Date : 2023-10-27 DOI:10.1080/10584587.2023.2234606

N. Wantana, F. Khrongchaiyaphum, J. Kaewkhao, N. Jearnkulprasert, P. Panyajirawut, O. Chaemlek

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引用次数: 0

摘要

摘要以不同浓度的Sm3+离子掺杂Na2O:Al2O3:Gd2O3:P2O5玻璃，并采用熔体猝灭技术合成。通过密度、摩尔体积、吸收、FTIR和光致发光测量，研究了这些玻璃的物理特性和光谱分析。随着Sm2O3浓度的增加，玻璃的密度和摩尔体积增大。玻璃吸收紫外线、可见光和近红外区的光子。在275 nm和402 nm激发下，Sm3+通过4G5/2到6H7/2的辐射跃迁产生了强烈的橙色发射。这种玻璃有一个有趣的潜在光子应用。关键词:钐能量转移发光披露声明作者未发现潜在利益冲突。额外的informationFundingO。chemlek要感谢Silpakorn大学理学院在经济上支持这项工作。J. Kaewkhao和N. Wantata要感谢那空梧桐拉贾哈特大学对这项研究的支持。

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Concentration Dependence of Sm ₂ O ₃ on Physical, Optical and Luminescence Properties of Na ₂ O:Al ₂ O ₃ :Gd ₂ O ₃ :P ₂ O ₅ Glass System

AbstractThe Na2O:Al2O3:Gd2O3:P2O5 glasses were doped with different concentrations of Sm3+ ions and synthesized by the melt-quenching technique. These glasses were investigated to characterize physical and spectroscopy analyses that have been carried out by density, molar volume, absorption, FTIR, and photoluminescence measurements. The density and molar volume of glasses increases with the addition of Sm2O3 concentration. Glasses absorbed photons in UV, VIS, and NIR regions. The strong orange emission via the 4G5/2 to 6H7/2 radiation transition of Sm3+ was generated under 275 and 402 nm excitation. The glass has an interesting potential photonic application.Keywords: SamariumEnergy TransferLuminescence Disclosure StatementNo potential conflict of interest was reported by the author(s).Additional informationFundingO. Chaemlek would like to thank the Faculty of Science, Silpakorn University for financially supporting this work. J. Kaewkhao and N. Wantata would like to thank Nakhon Pathom Rajabhat University for supporting this research.

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来源期刊

Integrated Ferroelectrics 工程技术-工程：电子与电气

CiteScore

1.40

自引率

0.00%

发文量

179

审稿时长

3 months

期刊介绍： Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices. Such devices unite ferroelectric films and semiconductor integrated circuit chips. The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.