氧化铝氧化锆复合陶瓷的制备与表征

IF 0.7 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
Aekasit Suthapintu, Aurawan Rittidech
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引用次数: 0

摘要

摘要制备了Al2O3 (6mol %MgO)与ZrO2 (4mol %Y2O3)的复合陶瓷,Al2O3 (6mol %MgO)与ZrO2 (4mol %Y2O3)的掺量分别为20:80、35:65、50:50、65:35和80:20。所有样品采用两阶段烧结路线,第一阶段温度(T1)在1600°C下烧结30分钟,第二阶段温度(T2)在1450°C下烧结5小时。物理性能通过收缩率和体积密度来表征。随着Al2O3 (6 mol%MgO)含量的增加,它们有降低的趋势。XRD谱图显示Al2O3的主相为菱形,ZrO2为单斜、立方、四方相。采用Rietveld精细化法计算相组成百分比。样品的主要成分分别为m-ZrO2 - c-ZrO2 - t-ZrO2和r- Al2O3。结果表明,样品中ZrO2含量越高,c-ZrO2的质量百分率越高。Al2O3浓度高的样品出现了高强度的Al2O3峰。扫描电镜显微照片显示晶粒的形貌,如晶粒形状和晶粒尺寸。晶粒尺寸平均值在0.81 ~ 1.07µm之间,随着Al2O3含量的增加晶粒尺寸有增大的趋势。EDX技术分析了Al2O3 (6mol %MgO)和ZrO2 (4mol %Y2O3)的元素组成,EDX光谱显示了Al, Zr, oy和Mg的wt.%元素,确定了分子式。EDX法鉴定出Al2O3 (6mol %MgO)呈方形,ZrO2 (4mol %Y2O3)呈圆形。力学性能采用维氏硬度和努氏硬度测定,并以此计算断裂韧性值。结果表明,0.35Al2O3 (6 mol%MgO): 0.65ZrO2 (4 mol%Y2O3)复合陶瓷的力学性能最佳,断裂韧性值最高,约为0.38 GPa.m1/2。关键词:zro2y2o3 mgoal 2o3力学性能rietveld细化披露声明作者未报告潜在利益冲突。本研究项目由泰国科学研究与创新(TSRI)和泰国Mahasarakham大学提供财政支持。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Preparation and Characterization of Alumina Zirconia Composite Ceramics
AbstractThe composite ceramics between Al2O3 (6 mol%MgO) and ZrO2 (4 mol%Y2O3) were prepared in the Al2O3 (6 mol%MgO added: ZrO2 (4 mol%Y2O3 added) ratios of 20:80, 35:65, 50:50, 65:35 and 80:20. All of samples were sintered using two stage sintering routes with the first temperature (T1) at 1600 °C for 30 min and the second temperature (T2) at 1450 °C for 5 h. The physical properties were characterized from percentage of shrinkage and bulk density. It can be found their tend to decrease with Al2O3 (6 mol%MgO) content increase. XRD patterns were showed combination main phase of rhombohedral of Al2O3 and monoclinic, cubic, tetragonal of ZrO2. Rietveld refinement were used to calculate the percentage of phase composition. All of samples were revealed weight percentage of main composition as m-ZrO2 c-ZrO2 t-ZrO2 and r- Al2O3 in different ratios. It can be found, sample with more content of ZrO2 was showed higher weight percentage of c-ZrO2. The high intensity of Al2O3 peak was appeared from sample with high Al2O3 concentration. SEM micrographs reveal morphology of grain such as grain shape and size of grains. The average grain size value is between 0.81 and 1.07 µm and the size of grain tend to increase with high Al2O3 content. EDX technique were analyzed element compositions of Al2O3 (6 mol%MgO): ZrO2 (4 mol%Y2O3) and EDX spectra were showed wt.% element of Al, Zr, O Y and Mg which is confirmed molecular formular. Moreover, EDX method is identified square shape of Al2O3 (6 mol%MgO) and round shape of ZrO2 (4 mol%Y2O3). The mechanical properties were measured by Vickers and Knoop hardness that were used for calculating the fracture toughness value. It can be found that the optimum mechanical properties were obtained from composite ceramic of 0.35Al2O3 (6 mol%MgO): 0.65ZrO2 (4 mol%Y2O3) which is showed the highest of fracture toughness value about 0.38 GPa.m1/2.Keywords: ZrO2Y2O3MgOAl2O3mechanical propertiesRietveld refinement Disclosure StatementNo potential conflict of interest was reported by the author(s).Additional informationFundingThis research project was financially supported by Thailand Science Research and Innovation (TSRI) and Mahasarakham University, Thailand.
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来源期刊
Integrated Ferroelectrics
Integrated Ferroelectrics 工程技术-工程:电子与电气
CiteScore
1.40
自引率
0.00%
发文量
179
审稿时长
3 months
期刊介绍: Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices. Such devices unite ferroelectric films and semiconductor integrated circuit chips. The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.
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