带电粒子在玻璃介质(ZnO:Li 2o:MgO: b2o3)中的行为相互作用:数学计算

IF 0.7 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

Integrated Ferroelectrics Pub Date : 2023-10-27 DOI:10.1080/10584587.2023.2234610

W. Chaiphaksa, W. Cheewasukhanont, J. Kaewkhao, N. W. Sangwaranatee

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引用次数: 0

摘要

摘要采用熔淬法制备了ZnO: Li2O: MgO: B2O3 (ZLMB)玻璃，并对其密度、摩尔体积等物理性能进行了研究。利用理论程序对质子和α等带电粒子的行为进行了SRIM编码模拟。在0.01 MeV ~ 10 MeV的能量范围内，通过SRIM模拟了总质量停止功率(TMSP)和投射范围(PR)。并对渗透深度和离子范围进行了模拟。结果发现，随着ZnO浓度的增加，密度增大。相反，随着ZnO浓度的增加，摩尔体积减小。而质子粒子和α粒子的TMSP和PR值随密度的增大而减小。作者在此感谢Suan Sunandha Rajabhat University和Nakhon Pathom Rajabhat University。披露声明作者未报告潜在的利益冲突。

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The Behavioral Interaction of Charged Particles via Glass Medium (ZnO:Li ₂ O:MgO:B ₂ O ₃ ): Mathematical Calculation

Abstract The glass compositions as ZnO: Li2O: MgO: B2O3 (ZLMB) were synthesized by melt-quenching technique, and studied physical properties such as density and molar volume. The behavior of charged particles such as proton and alpha was examined using the theoretical program by the SRIM coding simulation. The total mass stopping power (TMSP) and projected ranges (PR) were simulated via the SRIM at 0.01 MeV to 10 MeV of the energy ranges. The penetration depth and ion ranges also were simulated. The result found that density increased with increasing ZnO concentrations. In contrast, molar volume decreased when ZnO concentrations increased. However, The TMSP and PR values of proton and alpha particles showed decreased with raising density.

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来源期刊

Integrated Ferroelectrics 工程技术-工程：电子与电气

CiteScore

1.40

自引率

0.00%

发文量

179

审稿时长

3 months

期刊介绍： Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices. Such devices unite ferroelectric films and semiconductor integrated circuit chips. The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.